BSO615CT Infineon Technologies, BSO615CT Datasheet - Page 4

• Manufacturer Part Number: BSO615CT
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615CT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615CXTINTR

Electrical Characteristics, at T
Parameter
Characteristics
Gate to source charge
V
V
Gate to drain charge
V
V
Gate charge total
V
V
Gate plateau voltage
V
V
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
V
Reverse recovery time
V
V
Reverse recovery charge
V
V
DD
DD
DD
DD
DD
DD
DD
DD
A
A
GS
GS
R
R
R
R
= 25 °C
= 25 °C
= 30 V, I
= -30 V, I
= 30 V, I
= -30 V, I
= 48 V, I
= -48 V, I
= 48 V, I
= -48 V, I
= 48 V, I
= -48 V, I
= 48 V, I
= -48 V, I
= 0 V, I
= 0 V, I
F =
F =
F
F
F =
D
D
D
D
F =
= I
= I
D
D
D
D
l
l
S
S
l
= 3.1 A
= 3.1 A
= 3.1 A, V
= 3.1 A
S
l
= -2 A
= -2 A
= -2 A, V
= -2 A
, d i
S
S
S
, d i
, d i
, d i
F
F
/d t = 100 A/µs
F
F
/d t = 100 A/µs
/d t = -100 A/µs
/d t = -100 A/µs
GS
GS
= 0 to -10V
= 0 to 10V
j
= 25 °C, unless otherwise specified
Preliminary data
Page 4
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
Symbol
Q
Q
Q
V
I
I
V
t
Q
S
SM
rr
(plateau)
SD
gs
gd
g
rr
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
13.5
typ.
-2.8
-0.8
120
0.5
1.7
6.3
4.3
3.1
0.8
15
50
85
70
-
-
-
-
BSO 615 C
1999-10-28
max.
0.75
22.5
12.4
-1.1
130
105
180
2.6
9.5
6.5
3.1
1.1
20
75
-2
-8
-
-
Unit
nC
V
A
V
ns
µC