BSO615CT Infineon Technologies, BSO615CT Datasheet - Page 9

• Manufacturer Part Number: BSO615CT
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615CT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615CXTINTR

Drain-source on-resistance (N-Ch.)
R
parameter : I
Gate threshold voltage (N-Ch.)
V
parameter: V
GS(th)
DS(on)
0.30
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
V
V
V
V
3.0
3.0
3.0
3.0
2.5
2.5
2.5
2.5
2.2
2.2
2.2
2.2
2.0
2.0
2.0
2.0
1.8
1.8
1.8
1.8
1.5
1.5
1.5
1.5
1.2
1.2
1.2
1.2
1.0
1.0
1.0
1.0
0.8
0.8
0.8
0.8
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.0
0.0
0.0
0.0
-60
-60
-60
-60
-60
BSO 615 C
= f ( T j )
= f ( T
-20
-20
-20
-20
-20
D
GS
j
)
= 3.1 A , V
= V
20
98%
20
20
20
20
typ
DS
98%
2%
typ
, I
60
D
60
60
60
60
GS
= 20 µA
100
= 10 V
100
100
100
100
°C
Preliminary data
°C
°C
°C
°C
T
T
T
T
T
j
j
j
j
j
180
160
160
160
160
Page 9
Drain-source on-resistance (P-Ch.)
R
parameter : I
Gate threshold voltage (P-Ch.)
V
parameter: V
DS(on)
GS(th)
0.80
0.60
0.50
0.40
0.30
0.20
0.10
0.00
-3.0
-3.0
-3.0
-3.0
V
V
V
V
-2.5
-2.5
-2.5
-2.5
-2.2
-2.2
-2.2
-2.2
-2.0
-2.0
-2.0
-2.0
-1.8
-1.8
-1.8
-1.8
-1.5
-1.5
-1.5
-1.5
-1.2
-1.2
-1.2
-1.2
-1.0
-1.0
-1.0
-1.0
-0.8
-0.8
-0.8
-0.8
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
0.0
0.0
0.0
0.0
-60
-60
-60
-60
-60
BSO 615 C
= f ( T j )
= f ( T
-20
-20
-20
-20
-20
D
GS
j
)
= -2 A , V
= V
20
98%
20
20
20
20
typ
DS
98%
2%
typ
, I
60
D
GS
60
60
60
60
= -450 µA
= -10 V
100
BSO 615 C
100
100
100
100
1999-10-28
°C
°C
°C
°C
°C
T
T
T
T
T
j
j
j
j
j
180
160
160
160
160