SI1016X-T1-E3 Vishay, SI1016X-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1016X-T1-E3
• Description: MOSFET N/P-CH COMPL 20V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1016X-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 485mA, 370mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.7 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.485 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 600mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 700mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1016X-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS (T
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
V
4.0
3.2
2.4
1.6
0.8
0.0
GS
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
= 5 V thru 3 V
0.0
0
0.0
0.2
0.5
On-Resistance vs. Drain Current
200
V
I
D
DS
V
= 250 mA
DS
0.4
Output Characteristics
= 10 V
Q
- Drain-to-Source Voltage (V)
g
I
V
D
1.0
- Total Gate Charge (nC)
GS
- Drain Current (mA)
Gate Charge
0.6
400
V
= 1.8 V
GS
= 2.5 V
1.5
0.8
600
1.0
2.0
V
1.2
GS
800
2.5
= 4.5 V
1.4
2.5 V
1.8 V
2 V
1000
3.0
1.6
A
= 25 °C, unless otherwise noted)
1000
120
100
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
0.5
4
V
V
GS
DS
C
T
Transfer Characteristics
os s
J
0
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
is s
1.0
Capacitance
8
25
1.5
V
I
T
D
Vishay Siliconix
GS
J
= 350 mA
= - 55 °C
50
25 °C
12
= 4.5 V
2.0
V
f = 1 MHz
75
GS
Si1016X
V
I
D
www.vishay.com
GS
= 150 mA
= 0 V
16
= 1.8 V
125 °C
2.5
100
125
20
3.0
5