SI1016X-T1-E3 Vishay, SI1016X-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI1016X-T1-E3
• Description: MOSFET N/P-CH COMPL 20V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1016X-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 485mA, 370mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.7 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.485 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 600mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 700mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1016X-T1-E3TR

Si1016X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (T
www.vishay.com
6
1000
- 0.1
- 0.2
- 0.3
100
0.3
0.2
0.1
0.0
10
1
0.0
- 50
Threshold Voltage Variance vs. Temperature
Source-Drain Diode Forward Voltage
0.2
- 25
T
J
V
= 25 °C
SD
0.4
T
- Source-to-Drain Voltage (V)
0
J
T
J
= 125 °C
- T emperature (°C)
0.6
25
I
0.8
D
50
= 0.25 mA
T
J
7
6
5
4
3
2
1
0
- 50
= - 55 °C
1.0
75
- 25
1.2
100
BV
GSS
0
T
1.4
125
J
- T emperature (°C)
vs. Temperature
A
25
= 25 °C, unless otherwise noted)
50
75
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
- 50
100
0
I
On-Resistance vs. Gate-to-Source Voltage
D
= 200 mA
- 25
125
V
GS
1
V
= 4.5 V
GS
I
0
GSS
- Gate-to-Source Voltage (V)
T
J
2
- T emperature (°C)
vs. Temperature
25
S10-2432-Rev. E, 25-Oct-10
I
3
D
Document Number: 71168
= 350 mA
50
4
75
100
5
125
6