SI1016X-T1-E3 Vishay, SI1016X-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI1016X-T1-E3
• Description: MOSFET N/P-CH COMPL 20V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1016X-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 485mA, 370mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.7 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.485 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 600mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 700mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1016X-T1-E3TR

N- OR P-CHANNEL TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71168.
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
10
-2
Square Wave Pulse Duration (s)
10
-1
A
= 25 °C, unless otherwise noted)
1
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
A
t
1
= P
t
2
Vishay Siliconix
DM
Z
thJA
th JA
100
t
t
(t)
1
2
= 500 °C/W
Si1016X
www.vishay.com
600
7