DMG1016V-7 Diodes Inc, DMG1016V-7 Datasheet - Page 3
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DMG1016V-7
Manufacturer Part Number
DMG1016V-7
Description
MOSFET N+P 20V 870MA SOT563
Manufacturer
Diodes Inc
Datasheet
1.DMG1016V-7.pdf
(8 pages)
Specifications of DMG1016V-7
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
870mA, 640mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.74nC @ 4.5V
Input Capacitance (ciss) @ Vds
60.67pF @ 16V
Power - Max
530mW
Mounting Type
Surface Mount
Package / Case
SOT-563
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.5 Ohms, 1 Ohms
Drain-source Breakdown Voltage
20 V, - 20 V
Continuous Drain Current
870 mA, - 640 mA
Power Dissipation
530 mW
Maximum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DMG1016V-7DITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DMG1016V-7
Manufacturer:
TI
Quantity:
11 500
Company:
Part Number:
DMG1016V-7
Manufacturer:
DIODES
Quantity:
45 000
Part Number:
DMG1016V-7
Manufacturer:
DIODES/美台
Quantity:
20 000
N-CHANNEL – Q
DMG1016V
Document number: DS31767 Rev. 3 - 2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0
0
-50 -25
0
0
Fig. 5 On-Resistance Variation with Temperature
V
I = 500mA
D
0.5
GS
V
V
GS
V
V
GS
I = 250mA
= 4.5V
V
V
GS
D
GS
V , DRAIN-SOURCE VOLTAGE (V)
GS
V
vs. Drain Current and Gate Voltage
GS
I , DRAIN-SOURCE CURRENT (A)
V
= 1.2V
D
T , AMBIENT TEMPERATURE (°C)
= 1.5V
DS
GS
0.2
Fig. 1 Typical Output Characteristic
GS
= 2.0V
= 4.5V
A
1
= 2.5V
= 2.5V
Fig. 3 Typical On-Resistance
= 8.0V
= 3.0V
1
0
1.5
V
V
V
GS
GS
GS
0.4
25
2
= 2.5V
= 4.5V
= 1.8V
2.5
50
0.6
3
75
3.5
100
0.8
4
125 150
4.5
1.0
5
www.diodes.com
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1.0
0.5
0.4
0.3
0.2
0.1
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0
0
0
0
0
-50 -25
Fig. 6 On-Resistance Variation with Temperature
V
Fig. 2 Typical Transfer Characteristic
vs. Drain Current and Temperature
T , AMBIENT TEMPERATURE (°C)
0.2
GS
A
0.5
Fig. 4 Typical On-Resistance
, GATE-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
0
D
T = 125°C
I = 250mA
V
A
D
GS
T = 150°C
A
0.4
25
V
I = 500mA
= 2.5V
D
GS
= 4.5V
1
50
0.6
T = -55°C
75
A
T = 25°C
A
1.5
T = 150°C
T = 125°C
100
A
T = -55°C
T = 85°C
T = 25°C
A
DMG1016V
A
A
0.8
T = 85°C
A
A
© Diodes Incorporated
125 150
1.0
May 2009
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