DMG1016V-7 Diodes Inc, DMG1016V-7 Datasheet - Page 4

• Manufacturer Part Number: DMG1016V-7
• Description: MOSFET N+P 20V 870MA SOT563
• Manufacturer: Diodes Inc

Specifications of DMG1016V-7

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 870mA, 640mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.74nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 60.67pF @ 16V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms, 1 Ohms
• Drain-source Breakdown Voltage: 20 V, - 20 V
• Continuous Drain Current: 870 mA, - 640 mA
• Power Dissipation: 530 mW
• Maximum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMG1016V-7DITR

N-CHANNEL – Q
DMG1016V
Document number: DS31767 Rev. 3 - 2
1.6
1.2
0.8
0.4
100
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10
0
-50 -25
1
0
0.001
T , AMBIENT TEMPERATURE (°C)
0.01
A
V , DRAIN-SOURCE VOLTAGE (V)
0.1
0.00001
DS
1
Fig. 9 Typical Total Capacitance
0
1
5
D = 0.01
D = 0.1
D = 0.02
D = 0.005
D = 0.7
D = 0.05
D = 0.5
D = 0.3
D = Single Pulse
(continued)
25
0.0001
C
50
C
C
I = 250µA
rss
D
oss
10
iss
I = 1mA
75
D
0.001
100
15
125 150
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.01
20
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D = 0.9
4 of 8
0.1
1,000
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
100
1.0
0.8
0.6
0.4
0.2
10
1
0
0.2
0
1
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE (V)
SD
DS
0.4
4
P(pk)
10
T - T = P * R
Duty Cycle, D = t /t
R
J
R
θJA
θ
JA
t
(t) = r(t) *
A
1
0.6
t
= 260°C/W
2
8
T = 25°C
θ
R
A
JA
100
θ
1 2
JA
(t)
0.8
12
T = 150°C
T = 125°C
T = 25°C
T = 85°C
A
1,000
A
A
A
1.0
DMG1016V
16
© Diodes Incorporated
1.2
20
May 2009