DMG1016V-7 Diodes Inc, DMG1016V-7 Datasheet - Page 4
![MOSFET N+P 20V 870MA SOT563](/photos/5/24/52424/sot-563_sml.jpg)
DMG1016V-7
Manufacturer Part Number
DMG1016V-7
Description
MOSFET N+P 20V 870MA SOT563
Manufacturer
Diodes Inc
Datasheet
1.DMG1016V-7.pdf
(8 pages)
Specifications of DMG1016V-7
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
870mA, 640mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.74nC @ 4.5V
Input Capacitance (ciss) @ Vds
60.67pF @ 16V
Power - Max
530mW
Mounting Type
Surface Mount
Package / Case
SOT-563
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.5 Ohms, 1 Ohms
Drain-source Breakdown Voltage
20 V, - 20 V
Continuous Drain Current
870 mA, - 640 mA
Power Dissipation
530 mW
Maximum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DMG1016V-7DITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DMG1016V-7
Manufacturer:
TI
Quantity:
11 500
Company:
Part Number:
DMG1016V-7
Manufacturer:
DIODES
Quantity:
45 000
Part Number:
DMG1016V-7
Manufacturer:
DIODES/美台
Quantity:
20 000
N-CHANNEL – Q
DMG1016V
Document number: DS31767 Rev. 3 - 2
1.6
1.2
0.8
0.4
100
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10
0
-50 -25
1
0
0.001
T , AMBIENT TEMPERATURE (°C)
0.01
A
V , DRAIN-SOURCE VOLTAGE (V)
0.1
0.00001
DS
1
Fig. 9 Typical Total Capacitance
0
1
5
D = 0.01
D = 0.1
D = 0.02
D = 0.005
D = 0.7
D = 0.05
D = 0.5
D = 0.3
D = Single Pulse
(continued)
25
0.0001
C
50
C
C
I = 250µA
rss
D
oss
10
iss
I = 1mA
75
D
0.001
100
15
125 150
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.01
20
www.diodes.com
D = 0.9
4 of 8
0.1
1,000
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
100
1.0
0.8
0.6
0.4
0.2
10
1
0
0.2
0
1
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE (V)
SD
DS
0.4
4
P(pk)
10
T - T = P * R
Duty Cycle, D = t /t
R
J
R
θJA
θ
JA
t
(t) = r(t) *
A
1
0.6
t
= 260°C/W
2
8
T = 25°C
θ
R
A
JA
100
θ
1 2
JA
(t)
0.8
12
T = 150°C
T = 125°C
T = 25°C
T = 85°C
A
1,000
A
A
A
1.0
DMG1016V
16
© Diodes Incorporated
1.2
20
May 2009