QS6M3TR Rohm Semiconductor, QS6M3TR Datasheet - Page 2

• Manufacturer Part Number: QS6M3TR
• Description: MOSFET N+P 30,20V 1.5A TSMT6
• Manufacturer: Rohm Semiconductor

Specifications of QS6M3TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 1.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 80pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: TSMT6
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 360mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold: RoHS Compliant
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.23 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V @ N Channel or 20 V @ P Channel
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 1250 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
N-ch
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
V
I
DS (on)
C
C
Q
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
DSS
t
t
oss
SD
iss
rss
r
f
gs
gd
fs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
0.5
1.0
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
170
180
260
1.6
0.5
0.9
80
25
15
18
15
15
−
−
−
−
−
−
7
Max.
Max.
±10
230
245
360
1.2
1.5
−
1
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
I
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
V
V
I
S
D
D
D
D
D
D
D
=3.2A, V
GS
DS
DS
DS
GS
GS
DD
GS
=1mA, V
=1.5A, V
=1.5A, V
=1.0A, V
=1.0A, V
=1A, V
L
G
=1.5A
=15Ω
=10Ω
=±12V, V
=30V, V
=10V, I
=10V
=0V
=4.5V
=4.5V
15V
DD
Conditions
GS
Conditions
GS
GS
GS
GS
DS
D
GS
=1mA
R
R
=0V
=0V
=4.5V
=4.0V
=2.5V
=10V
15V
DS
=0V
L
G
=10Ω
=0V
=10Ω
Rev.B
QS6M3
2/7