QS6M3TR Rohm Semiconductor, QS6M3TR Datasheet - Page 7

• Manufacturer Part Number: QS6M3TR
• Description: MOSFET N+P 30,20V 1.5A TSMT6
• Manufacturer: Rohm Semiconductor

Specifications of QS6M3TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 1.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 80pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: TSMT6
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 360mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold: RoHS Compliant
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.23 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V @ N Channel or 20 V @ P Channel
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 1250 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
P-ch
Measurement circuit
Fig.3-1 Switching Time Measurement Circuit
Fig.4-1 Gate Charge Measurement Circuit
I
G(Const.)
R
R
G
G
V
V
GS
GS
D.U.T.
D.U.T.
I
D
I
D
R
V
R
V
L
DD
L
DD
V
V
DS
DS
V
V
GS
DS
V
t
d(on)
GS
Fig.4-2 Gate Charge Waveform
V
Fig.3-2 Switching Waveforms
G
Q
gs
10%
t
on
50%
90%
Pulse Width
t
r
Q
10%
gd
Q
g
90%
t
Rev.B
d(off)
Charge
t
off
50%
QS6M3
tf
90%
10%
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