BSO150N03 Infineon Technologies, BSO150N03 Datasheet

MOSFET N-CHAN 30V 7.6A DSO-8

BSO150N03

Manufacturer Part Number
BSO150N03
Description
MOSFET N-CHAN 30V 7.6A DSO-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO150N03

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 9.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.6A
Vgs(th) (max) @ Id
2V @ 25µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
1890pF @ 15V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
DSO-8
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.6 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSO150N03
BSO150N03INTR
BSO150N03XT
SP000077687

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0
Rev. 1.6
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC
• N-channel
• Logic level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSO150N03
®
2 Power-Transistor
j
Package
PG-DSO-8
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target applications
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
150N3
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
A
A
A
j,max
A
=9.1 A, R
=9.1 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
2)
2)
3)
2)
DS
GS
Product Summary
V
R
I
=20 V,
=25 Ω
D
DS
DS(on),max
10 secs
9.1
7.3
2.0
-55 ... 150
55/150/56
Value
±20
PG-DSO-8
36
82
6
steady state
7.6
6.1
1.4
BSO150N03
30
15
9.1
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2008-01-16

Related parts for BSO150N03

BSO150N03 Summary of contents

Page 1

... Symbol Conditions =25 ° =70 ° =25 °C D,pulse A =25 Ω = /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot stg page 1 BSO150N03 mΩ 9.1 A PG-DSO-8 Value Unit 10 secs steady state 9.1 7.6 A 7.3 6 kV/µs ±20 V 2.0 1.4 W -55 ... 150 °C 55/150/56 2008-01-16 ...

Page 2

... GS(th = DSS T =25 ° = =125 ° = GSS =4 =8.4 A DS( |>2 DS(on)max =9 (one layer, 70 µm thick) copper area for drain page 2 BSO150N03 Values Unit min. typ. max K 110 - - 150 , - - 1.2 1 0.1 1 µ 100 - 10 100 nA - 15.2 19 mΩ - 12.5 15 Ω 2008-01-16 ...

Page 3

... =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse =25 ° = /dt =400 A/µs F page 3 BSO150N03 Values Unit min. typ. max. - 1420 1890 pF - 510 680 - 67 100 - 5.3 7 4.0 6 3.0 4.5 - 3.9 5 2.3 3.0 - 2.6 4.0 - 4 2008-01-16 ...

Page 4

... V Rev. 1.6 2 Drain current I =f 120 160 0 [° Max. transient thermal impedance Z =f(t thJS p parameter 100 10 µs 100 µ 0.1 10 100 0.00001 [V] DS page 4 BSO150N03 ≥ ≤ 120 T [° 0.05 single pulse 0.0001 0.001 0.01 0 [s] p 160 2008-01-16 ...

Page 5

... V 7 Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev. 1.6 6 Typ. drain-source on resistance R =f(I DS(on) parameter 3 2 Typ. forward transconductance g =f 125 °C 25 ° [V] GS page 5 BSO150N03 ); T =25 ° 3 [A] D =25 ° [A] D 3 2008-01-16 ...

Page 6

... Forward characteristics of reverse diode I =f parameter: T 100 10 1 Crss 0 0.0 [V] DS page 6 BSO150N03 ); 250 µA 25 µA - 100 140 T [° 150 °C 25 °C 150 ° °C, 98% 0.2 0.4 0.6 0.8 1.0 V [V] SD 180 1.2 2008-01-16 ...

Page 7

... AV GS parameter: T j(start) 10 125 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.6 14 Typ. gate charge V =f(Q GS parameter 100 °C 25 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 BSO150N03 ); I =4.5 A pulsed gate [nC] gate ate 2008-01-16 ...

Page 8

... Package Outline Rev. 1.6 PG-DSO-8 page 8 BSO150N03 2008-01-16 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user Rev. 1.6 page 9 BSO150N03 2008-01-16 ...

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