FDS8958B Fairchild Semiconductor, FDS8958B Datasheet - Page 2

• Manufacturer Part Number: FDS8958B
• Description: MOSFET N/P-CH 30V TRENCH 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8958B

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.4A, 4.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 6.4 A @ N Channel or 4.5 A @ P Channel
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958BTR

FDS8958B Rev.B
©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
∆T
∆T
iss
oss
rss
g
g(TOT)
g(TOT)
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25 °C unless otherwise noted
I
I
I
I
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
Q1
V
V
Q2
V
V
V
V
V
V
D
D
D
D
D
D
Q1
V
Q2
V
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DD
DD
DD
GS
DD
GS
GS
GS
GS
GS
DS
DS
= 250 µA, V
= -250 µA, V
= 250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
= 250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
= 24 V, V
= -24 V, V
= ±20 V, V
= ±25 V, V
= V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= -10 V, I
= -4.5 V, I
= -10 V, I
= 5 V, I
= -5 V, I
= 15 V, V
= -15 V, V
= 15 V, I
= 10 V, R
= -15 V, I
= -10 V, R
= 10 V
= -10 V
= 4.5 V
= -4.5 V
DS
DS
Test Conditions
, I
, I
D
2
D
D
D
D
D
D
D
D
D
GS
D
= 6.4 A
GEN
GS
D
= -4.5 A
GS
GS
GS
= 250 µA
= -250 µA
GEN
GS
DS
DS
= 6.4 A,
= 6.4 A
= 6.4A, T
= -4.5 A, T
= -4.5 A,
= 5.2 A
= -4.5 A
Q1
Q2
= -3.3 A
V
I
V
I
= 0 V, f = 1 MHZ
= 0 V
D
D
= 0 V, f = 1 MHZ
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
DD
DD
= 6 Ω
= 6 Ω
= 6.4 A
= -4.5 A
= 15 V,
= -15 V,
J
= 125 °C
J
= 125 °C
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
-1.0
1.0
Min
-30
30
-1.9
405
570
115
100
Typ
-21
2.0
2.4
4.4
21
29
31
38
60
53
20
10
75
55
4.3
6.0
2.0
6.0
2.0
7.0
8.3
4.1
7.0
1.3
1.9
1.7
3.6
24
-6
12
17
14
5
±100
www.fairchildsemi.com
540
760
100
155
150
Max
±10
-3.0
3.0
5.8
9.6
80
26
39
39
51
80
72
10
12
10
12
22
30
10
14
12
19
-1
1
mV/°C
mV/°C
Units
mΩ
µA
nA
µA
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Ω
V
V
S