FDS8958B Fairchild Semiconductor, FDS8958B Datasheet - Page 7

• Manufacturer Part Number: FDS8958B
• Description: MOSFET N/P-CH 30V TRENCH 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8958B

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.4A, 4.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 6.4 A @ N Channel or 4.5 A @ P Channel
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958BTR

FDS8958B Rev.B
©2008 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 P-Channel)
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
30
24
18
12
5
0
6
0
Figure 15. On- Region Characteristics
-75
Figure 17. Normalized On-Resistance
0.0
1
Figure 19. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
D
GS
-50
= -4.5 A
= -5 V
-V
= -10 V
vs Junction Temperature
0.5
V
DS
GS
T
2
-25
,
J
,
-V
DRAIN TO SOURCE VOLTAGE (V)
= -10 V
JUNCTION TEMPERATURE (
GS
, GATE TO SOURCE VOLTAGE (V)
1.0
0
3
25
T
µ
J
s
1.5
= -55
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
o
4
C
2.0
75
V
T
GS
J
o
100 125 150
C )
= 125
V
= -6 V
V
V
GS
GS
T
5
GS
2.5
J
= -4.5 V
= -4 V
= -3.5 V
= 25
o
C
µ
o
s
C
3.0
6
T
J
7
= 25 °C unless otherwise noted
Figure 16. Normalized on-Resistance vs Drain
0.01
0.1
30
10
200
160
120
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
40
0.2
0
Figure 18. On-Resistance vs Gate to
Forward Voltage vs Source Current
2
0
Figure 20. Source to Drain Diode
T
V
J
GS
= 125
-V
0.4
= 0 V
Current and Gate Voltage
SD
V
, BODY DIODE FORWARD VOLTAGE (V)
o
GS
-V
C
6
= -3.5 V
GS
-I
Source Voltage
0.6
4
D
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.8
12
V
T
GS
J
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
= -55
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
= -4 V
1.0
T
J
o
18
= 25
C
1.2
V
o
GS
C
T
T
J
J
= -4.5 V
8
= 125
= 25
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24
I
V
D
V
1.4
GS
= -2.3 A
GS
o
C
= -10 V
o
= -6 V
µ
C
s
µ
s
1.6
10
30