SI6963BDQ-T1-GE3 Vishay, SI6963BDQ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI6963BDQ-T1-GE3
• Description: MOSFET DL P-CH 20V 3.9A 8-TSSOP
• Manufacturer: Vishay

Specifications of SI6963BDQ-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6963BDQ-T1-GE3TR

Si6963BDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
- 50.0 - 25.0
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
I
D
0.0
= 250 µA
Threshold Voltage
T
25.0
J
- Temperature (°C)
10
-3
50.0
Normalized Thermal Transient Impedance, Junction-to-Ambient
75.0 100.0 125.0 150.0
0.01
100
0.1
10
1
0.1
10
-2
Limited by R
* V
Safe Operating Area, Junction-to-Case
GS
> minimum V
V
DS
Single Pulse
Square Wave Pulse Duration (s)
DS(on)
T
- Drain-to-Source Voltage (V)
C
1
= 25 °C
10
*
-1
GS
at which R
10
DS(on)
200
160
120
80
40
1
0
is specified
10
1 ms
10 ms
100 ms
1 s
10 s
DC
-3
Single Pulse Power, Junction-to-Ambient
100
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
A
1
= P
S-81221-Rev. B, 02-Jun-08
10
t
Document Number: 72772
2
-1
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 115 °C/W
1
600
10