SI6963BDQ-T1-GE3 Vishay, SI6963BDQ-T1-GE3 Datasheet - Page 5
![MOSFET DL P-CH 20V 3.9A 8-TSSOP](/photos/5/42/54235/pkg_5844_sml.jpg)
SI6963BDQ-T1-GE3
Manufacturer Part Number
SI6963BDQ-T1-GE3
Description
MOSFET DL P-CH 20V 3.9A 8-TSSOP
Manufacturer
Vishay
Datasheet
1.SI6963BDQ-T1-GE3.pdf
(6 pages)
Specifications of SI6963BDQ-T1-GE3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 3.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Transistor Polarity
P Channel
Continuous Drain Current Id
-3.9A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
80mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-1.4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI6963BDQ-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6963BDQ-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72772.
Document Number: 72772
S-81221-Rev. B, 02-Jun-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si6963BDQ
www.vishay.com
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