IRF7314QTRPBF International Rectifier, IRF7314QTRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7314QTRPBF
• Description: MOSFET HEX P-CH DUAL 20V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7314QTRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 913pF @ 15V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 58mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -700mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7314QTRPBFCT

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100
0.01
0.1
100
10
0.1
10
1
1
1.0
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
0.1
-V
GS
-V DS , Drain-to-Source Voltage (V)
2.0
, Gate-to-Source Voltage (V)
T = 25 C
J
1
3.0
°
-1.5V
20µs PULSE WIDTH
Tj = 25°C
V
20µs PULSE WIDTH
DS
T = 175 C
= -15V
J
10
4.0
TOP
BOTTOM -1.5V
°
5.0
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
VGS
-7.5V
100
100
0.1
10
1
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
I =
D
-5.2A
-V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
20 40 60 80 100 120 140 160 180
1
20µs PULSE WIDTH
Tj = 175°C
-1.5V
10
TOP
BOTTOM -1.5V
V
°
GS
=
-4.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
VGS
-7.5V
3
100