IRF7314QTRPBF International Rectifier, IRF7314QTRPBF Datasheet - Page 4
![MOSFET HEX P-CH DUAL 20V 8-SOIC](/photos/5/44/54411/irf7314qtrpbf_sml.jpg)
IRF7314QTRPBF
Manufacturer Part Number
IRF7314QTRPBF
Description
MOSFET HEX P-CH DUAL 20V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7314QTRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
58 mOhm @ 5.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 4.5V
Input Capacitance (ciss) @ Vds
913pF @ 15V
Power - Max
2.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
-5.2A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
58mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-700mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7314QTRPBFCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7314QTRPBF
Manufacturer:
IR
Quantity:
20 000
4
2000
1600
1200
800
400
100
0.1
10
0
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
-V
-V
DS
SD
Forward Voltage
V
C
C
C
0.5
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
T = 175 C
=
=
=
=
J
C iss
C oss
0V,
C
C
C
C rss
gs
gd
ds
+ C
+ C
0.8
10
°
f = 1MHz
gd ,
gd
T = 25 C
C
J
ds
1.1
SHORTED
V
GS
°
= 0 V
1.4
100
1000
100
Fig 8. Maximum Safe Operating Area
10
10
8
6
4
2
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C
= 175 C
-5.2A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
DS
Q , Total Gate Charge (nC)
°
8
°
G
, Drain-to-Source Voltage (V)
1
16
BY R
V
DS
DS(on)
=-16V
24
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10
100us
1ms
10ms
32
100
40