IRF7314QTRPBF International Rectifier, IRF7314QTRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7314QTRPBF
• Description: MOSFET HEX P-CH DUAL 20V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7314QTRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 913pF @ 15V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 58mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -700mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7314QTRPBFCT

4
2000
1600
1200
800
400
100
0.1
10
0
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
-V
-V
DS
SD
Forward Voltage
V
C
C
C
0.5
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
T = 175 C
=
=
=
=
J
C iss
C oss
0V,
C
C
C
C rss
gs
gd
ds
+ C
+ C
0.8
10
°
f = 1MHz
gd ,
gd
T = 25 C
C
J
ds
1.1
SHORTED
V
GS
°
= 0 V
1.4
100
1000
100
Fig 8. Maximum Safe Operating Area
10
10
8
6
4
2
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C
= 175 C
-5.2A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
DS
Q , Total Gate Charge (nC)
°
8
°
G
, Drain-to-Source Voltage (V)
1
16
BY R
V
DS
DS(on)
=-16V
24
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10
100us
1ms
10ms
32
100
40