SI7945DP-T1-GE3 Vishay, SI7945DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7945DP-T1-GE3
• Description: MOSFET DL P-CH 30V PPAK 8-SOIC
• Manufacturer: Vishay

Specifications of SI7945DP-T1-GE3

• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 20V
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8 Dual
• Module Configuration: Dual
• Power Dissipation: RoHS Compliant
• Continuous Drain Current Id: 10.9A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7945DP-T1-GE3TR

Si7945DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
-
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10 -
3
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
J
- Temperature (°C)
Single Pulse
25
I
D
= 250 µA
10 -
50
2
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
100
0.1
10
1
0.1
Limited by R
10 -
125
Limited
I
D( on)
1
Single Pulse
T
A
Square Wave Pulse Duration (s)
150
V
= 25 °C
DS
DS(on)
Safe Operating Area
- Drain-to-Source V oltage (V)
1
BVDSS Limited
1
1 0
40
30
20
10
0
0.01
I
DM
Single Pulse Power, Junction-to-Ambient
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
1 0
0.1
100
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
T
Time (s)
t
A
1
S09-0227-Rev. D, 09-Feb-09
= P
t
2
Document Number: 72090
DM
100
Z
10
th J A
th J A
t
t
1
2
(t )
= 60 °C/W
100
600
1000