SI7945DP-T1-GE3 Vishay, SI7945DP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7945DP-T1-GE3
• Description: MOSFET DL P-CH 30V PPAK 8-SOIC
• Manufacturer: Vishay

Specifications of SI7945DP-T1-GE3

• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 20V
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8 Dual
• Module Configuration: Dual
• Power Dissipation: RoHS Compliant
• Continuous Drain Current Id: 10.9A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7945DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72090.
Document Number: 72090
S09-0227-Rev. D, 09-Feb-09
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Duty Cycle = 0.5
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Single Pulse
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Normalized Thermal Transient Impedance, Junction-to-Case
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Square Wave Pulse Duration (s)
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Vishay Siliconix
Si7945DP
www.vishay.com
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