SI7945DP-T1-E3 Vishay, SI7945DP-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI7945DP-T1-E3
• Description: MOSFET DUAL P-CH 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7945DP-T1-E3

• Transistor Polarity: Dual P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8 Dual
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -10.9A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 31mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7945DP-T1-E3TR

PowerPAK
Document Number: 71655
Revison: 15-Feb-10
ECN: T10-0055-Rev. J, 15-Feb-10
DWG: 5881
DIM.
A1
D1
D2
D3
D4
D5
E1
E2
E3
K1
L1
E4
W
M
D
H
A
b
c
E
e
K
L
θ
®
SO-8, (SINGLE/DUAL)
1
2
3
4
Notes
1.
2
3.
MIN.
0.97
0.00
0.33
0.23
5.05
4.80
3.56
1.32
6.05
5.79
3.48
3.68
0.56
0.51
0.51
0.06
0.15
Inch will govern.
Dimensions exclusive of mold gate burrs.
Dimensions exclusive of mold flash and cutting burrs.
0°
W
E1
2
E
MILLIMETERS
0.125 TYP.
0.57 TYP.
3.98 TYP.
0.75 TYP.
1.27 BSC
1.27 TYP.
NOM.
1.04
0.41
0.28
5.15
4.90
3.76
1.50
6.15
5.89
3.66
3.78
0.61
0.61
0.13
0.25
-
-
-
L1
Detail Z
Z
MAX.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
6.25
5.99
3.84
3.91
0.71
0.71
0.20
0.36
A1
12°
-
0.038
0.000
0.013
0.009
0.199
0.189
0.140
0.052
0.238
0.228
0.137
0.145
0.022
0.020
0.020
0.002
0.006
MIN.
Backside View of Single Pad
0°
Backside View of Dual Pad
H
H
Package Information
E3
E3
D1
D2
D
E2
E2
0.0225 TYP.
0.157 TYP.
0.030 TYP.
0.050 TYP.
0.005 TYP.
0.050 BSC
E4
E4
INCHES
NOM.
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.242
0.232
0.144
0.149
0.024
0.024
0.005
0.010
-
-
-
K
K
Vishay Siliconix
L
L
1
2
3
4
1
2
3
4
www.vishay.com
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
0.246
0.236
0.151
0.154
0.028
0.028
0.008
0.014
12°
-
1