FDG6322C Fairchild Semiconductor, FDG6322C Datasheet
FDG6322C
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FDG6322C Summary of contents
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... Human Body Model). TM SOT-8 SuperSOT - unless other wise noted A N-Channel 25 0.22 0.65 (Note 1) (Note1) June 2008 = 4 4.5 V, DS(ON 5 2.7 V. DS(ON 1 -4.5V, DS(ON 1 -2.7V. DS(ON) GS < 1.5 V). GS(th) SO-8 SOIC- P-Channel - -0.41 -1.2 0.3 -55 to 150 6 415 Units °C kV °C/W FDG6322C Rev.F1 ...
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... C N-Ch -2 P-Ch 2.1 N-Ch 2.6 4 =125°C 5 3.7 5 P-Ch 0.85 1.1 =125°C 1.2 1.9 J 1.15 1.5 N-Ch 0.22 P-Ch -0.41 N-Ch 0.2 P-Ch 0.9 N-Ch 9.5 P-Ch 62 N-Ch 6 P-Ch 34 N-Ch 1.3 P-Ch 10 FDG6322C Rev.F1 Units V o mV/ C µA µ mV ...
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... C/W on minimum mounting pad on FR-4 board in still air. JA Type Min Typ Max Units N- P- N- N- N-Ch 0.29 0.4 nC P-Ch 1.1 1.5 N-Ch 0.12 nC P-Ch 0.31 N-Ch 0.03 nC P-Ch 0.29 N-Ch 0.25 A P-Ch -0.25 N-Ch 0.8 1.2 V P-Ch -0.85 -1.2 is guaranteed JC FDG6322C Rev.F1 ...
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... Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.10A D T =125°C A 25° ,GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDG6322C.Rev F1 5.0V 0.4 5 1.2 ...
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... Figure 9. Maximum Safe Operating Area. (continued MHz 0.1 0.5 0.6 Figure 8. Capacitance Characteristics 0.0001 Figure 10. Single Pulse Maximum Power C iss C oss C rss = DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =415°C 25°C A 0.001 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. FDG6322C Rev.F1 25 200 ...
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... DRAIN CURRENT (A) D Drain Current and Gate Voltage -0. 125 ° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. -4.5V 1 1.2 25° 1.2 FDG6322C Rev.F1 ...
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... Figure 19. Maximum Safe Operating Area. (continued) 200 -10V 80 -15V 0.1 1.2 1.6 Figure 18. Capacitance Characteristics 0.0001 Figure 20. Single Pulse Maximum Power C iss C oss C rss MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =415°C 25°C A 0.001 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. FDG6322C Rev.F1 25 200 ...
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... Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. Transient thermalresponse will change depending on the circuit board design. (continued) 0.01 0 TIME (sec ( =415 °C/W JA P(pk ( Duty Cycle 100 200 FDG6322C Rev.F1 ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...