FDG6322C Fairchild Semiconductor, FDG6322C Datasheet - Page 4

• Manufacturer Part Number: FDG6322C
• Description: IC FET DGTL N/P-CHAN DUAL SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6322C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA, 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 0.2 S, 0.9 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.22 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6322CTR

Typical Electrical Characteristics: N-Channel
0.5
0.4
0.3
0.2
0.1
0.15
0.05
0
0.2
0.1
0
1.8
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation
0
0.5
1
-50
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
DS
V
= 5V
I = 0.22A
D
V
GS
-25
GS
1
= 4.5V
=4.5V
with Temperature.
1
V
V
DS
GS
T , JUNCTION TEMPERATURE (°C)
, DRAIN-SOURCE VOLTAGE (V)
0
, GATE TO SOURCE VOLTAGE (V)
J
3.5V
2
3.0V
1.5
25
2.7V
T = -55°C
J
50
2.5V
3
2
75
25°C
2.0V
125°C
100
4
2.5
125
5
3
150
20
16
12
4.5
3.5
2.5
0.0001
8
4
0
0.001
5
4
3
2
0.01
1
0
0.4
0.1
Figure 4. On-Resistance Variation with
Figure 6. Body Diode Forward Voltage
0
Figure 2. On-Resistance Variation with
V
GS
= 0V
V
GS
0.2
V
V
SD
0.1
GS
= 2.5V
2
, BODY DIODE FORWARD VOLTAGE (V)
Drain Current and Gate Voltage.
,GATE TO SOURCE VOLTAGE (V)
Gate-to-Source Voltage.
Variation with Source Current
and Temperature.
I , DRAIN CURRENT (A)
D
0.4
2.7V
T = 125°C
J
0.2
3.0V
3
0.6
25°C
T =125°C
A
-55°C
3.5V
25°C
0.8
4.0V
0.3
4
4.5V
I = 0.10A
D
FDG6322C.Rev F1
1
5.0V
0.4
1.2
5