FDG6322C Fairchild Semiconductor, FDG6322C Datasheet - Page 8

• Manufacturer Part Number: FDG6322C
• Description: IC FET DGTL N/P-CHAN DUAL SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6322C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA, 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 0.2 S, 0.9 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.22 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6322CTR

Typical Thermal Characteristics: N & P-Channel
0.005
0.002
0.05
0.02
0.01
0.5
0.2
0.1
0.0001
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 21. Transient Thermal Response Curve.
Single Pulse
0.001
Transient thermalresponse will change depending on the circuit board design.
Thermal characterization performed using the conditions described in note 1.
0.01
t , TIME (sec)
1
0.1
(continued)
1
P(pk)
T - T
Duty Cycle, D = t / t
J
R
R
10
t
JA
1
A
JA
t
= P * R
(t) = r(t) * R
2
=415 °C/W
JA
1
(t)
2
JA
100
FDG6322C Rev.F1
200