FDC6321C Fairchild Semiconductor, FDC6321C Datasheet - Page 4

• Manufacturer Part Number: FDC6321C
• Description: MOSFET N/P-CH DUAL 25V SSOT-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6321C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 680mA, 460mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2.3nC @ 5V
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.45 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 1.45 S, 0.8 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V @ N Channel or - 8 V @ P Channel
• Continuous Drain Current: 0.68 A @ N Channel or 0.46 A @ P Channel
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 460mA
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 1.1ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 800mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6321C

Typical Electrical Characteristics: N-Channel
1.5
1.2
0.9
0.6
0.3
0.8
0.6
0.4
0.2
0
1
0
1.6
1.4
1.2
0.8
0.6
0
Figure 1. On-Region Characteristics.
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
0
1
-50
V
V
V
GS
DS
I =0.5 A
D
GS
2.7
-25
= 5.0V
= 4.5V
3.0
= 4.5 V
3.5
0.5
with Temperature.
V
V
0.5
DS
GS
T , JUNCTION TEMPERATURE (°C)
, DRAIN-SOURCE VOLTAGE (V)
0
, GATE TO SOURCE VOLTAGE (V)
J
2.5
25
1
1
50
2.0
T = -55°C
J
1.5
75
1.5
1.5
100
125°C
2
25°C
125
2
2.5
150
0.0001
0.001
0.01
1.6
1.2
0.8
0.4
0.1
1.5
0.5
2
0
Figure 4. On Resistance Variation with
1
2
1
1
Figure 6. Body Diode Forward Voltage
0
0
Figure 2. On-Resistance Variation with
V
GS
Variation with Source Current and
Drain Current and Gate Voltage.
= 0V
1.5
V
0.2
V
GS
0.2
SD
= 2.0V
, BODY DIODE FORWARD VOLTAGE (V)
V
2
Gate-To-Source Voltage.
GS
, GATE TO SOURCE VOLTAGE (V)
0.4
T = 125°C
0.4
I
D
J
2.5
, DRAIN CURRENT (A)
2.5
125°C
25°C
0.6
0.6
2.7
Temperature.
3
-55°C
25°C
3.0
3.5
0.8
0.8
3.5
4
1
4.5
1
FDC6321C.RevB
ID= 0.5A
4.5
1.2
1.2
5