FDC6321C Fairchild Semiconductor, FDC6321C Datasheet - Page 5

MOSFET N/P-CH DUAL 25V SSOT-6

FDC6321C

Manufacturer Part Number
FDC6321C
Description
MOSFET N/P-CH DUAL 25V SSOT-6
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDC6321C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
450 mOhm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
680mA, 460mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
2.3nC @ 5V
Input Capacitance (ciss) @ Vds
50pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.45 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
1.45 S, 0.8 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V @ N Channel or - 8 V @ P Channel
Continuous Drain Current
0.68 A @ N Channel or 0.46 A @ P Channel
Power Dissipation
900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
460mA
Drain Source Voltage Vds
25V
On Resistance Rds(on)
1.1ohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
800mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6321C

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Typical Electrical Characteristics: N-Channel
0.03
0.01
5
4
3
2
1
0
0.3
0.1
Figure 7. Gate Charge Characteristics.
0
5
1
Figure 9. Maximum Safe Operating Area.
0.1
I = 0.5A
D
R
SINGLE PULSE
0.2
JA
V
T = 25°C
0.4
= See note 1b
GS
A
= 4.5V
V
0.5
DS
, DRAI N-SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
0.8
1
2
1.2
5
V
DS
= 5V
10
1.6
15V
20
10V
40
2
5
4
3
2
1
0
0.01
150
100
50
20
10
(continued)
5
0.1
Figure 10. Single Pulse Maximum Power
Figure 8. Capacitance Characteristics.
f = 1 MHz
V
GS
= 0V
0.1
V
DS
Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
0.5
SINGLE PULSE TIME (SEC)
1
1
2
R
10
SINGLE PULSE
5
JA
T = 25°C
=See note 1b
A
10
C rss
C iss
C oss
FDC6321C.RevB
100
25
300

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