FDS9933BZ Fairchild Semiconductor, FDS9933BZ Datasheet - Page 2
![MOSFET P-CH DUAL 20V 4.9A 8-SOIC](/photos/5/44/54432/fds9933bz_sml.jpg)
FDS9933BZ
Manufacturer Part Number
FDS9933BZ
Description
MOSFET P-CH DUAL 20V 4.9A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS9933BZ.pdf
(6 pages)
Specifications of FDS9933BZ
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 4.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
985pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.046 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.9 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS9933BZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS9933BZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS9933BZ-NL
Manufacturer:
FAIRCHILD
Quantity:
12 647
Part Number:
FDS9933BZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
BV
∆BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
S
rr
DS(on)
FS
GS(th)
SD
the user's board design.
∆T
∆T
iss
oss
rss
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum continuous Drain-Sourse Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25°C unless otherwise noted
a) 78°C/W when mounted on a 1 in
pad of 2 oz copper
V
V
V
V
V
f = 1MHz
I
I
V
V
V
I
V
V
V
V
V
I
D
D
D
F
DD
GS
DD
GS
DS
DS
GS
GS
GS
GS
GS
DD
GS
= -4.9A, di/dt = 100A/µs
= -250µA, V
= -250µA, referenced to 25°C
= -250µA, referenced to 25°C
= -4.5V
= -10V, V
= -10V, I
= -4.5V, R
= -10V, I
= -16V, V
= 0V, I
= ±12V, V
= V
= -4.5V, I
= -2.5V, I
= -4.5V, I
= -10V, I
2
DS
Test Conditions
, I
S
D
D
= -1.3A
D
D
GS
2
D
D
D
GS
GS
DS
= -4.9A,
GEN
= -4.9A
= -250µA
= -4.9A
= -4.9A, T
= -4.9A
= -4.0A
= 0V,
= 0V
= 0V
= 0V
= 6Ω
(Note 2)
J
= 125°C
θJC
is guaranteed by design while R
b) 135°C/W when mounted on a
minimun pad
-0.4
Min
-20
-0.8
740
160
145
6.7
9.3
1.4
3.7
59
47
46
23
11
-0.9
Typ
38
54
52
17
3
-9
-1.3
-1.2
985
215
220
-1.5
θCA
14
19
95
76
15
74
37
±10
46
69
67
Max
www.fairchildsemi.com
1
is determined by
mV/°C
mV/°C
mΩ
Units
pF
pF
pF
nC
µA
µA
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
A
V