FDS9933BZ Fairchild Semiconductor, FDS9933BZ Datasheet - Page 5

• Manufacturer Part Number: FDS9933BZ
• Description: MOSFET P-CH DUAL 20V 4.9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9933BZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 4.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 985pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.046 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9933BZTR

©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
Typical Characteristics
0.01
0.1
1
2
10
-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
10
-2
SINGLE PULSE
R
θ
JA
T
= 135
Figure 13. Transient Thermal Response Curve
J
= 25°C unless otherwise noted
o
C/W
10
-1
t, RECTANGULAR PULSE DURATION (sec)
5
10
0
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
1
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
θJA
t
100
1
+ T
t
2
A
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