FDS9933BZ Fairchild Semiconductor, FDS9933BZ Datasheet - Page 3

• Manufacturer Part Number: FDS9933BZ
• Description: MOSFET P-CH DUAL 20V 4.9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9933BZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 4.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 985pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.046 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9933BZTR

©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
30
25
20
15
10
Figure 3. Normalized On- Resistance
-75
0.5
5
0
5
0
Figure 1.
0
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
V
D
-50
GS
GS
DS
= -4.9A
vs Junction Temperature
= -4.5V
1.0
= -4.5V
= -5.0V
-25
-V
-V
T
J
On-Region Characteristics
GS
DS
T
,
1
J
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
,
= 150
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
DRAIN TO SOURCE VOLTAGE (V)
1.5
0
o
C
25
µ
2.0
T
s
V
J
2
GS
= -55
50
T
= -3.5V
T
J
J
o
= 25
C
= 25°C unless otherwise noted
2.5
75
o
µ
C
s
100 125 150
3
o
C )
V
3.0
V
V
GS
GS
GS
= -2.5V
= -2V
= -3V
3.5
4
3
1E-3
0.01
100
250
200
150
100
0.1
10
50
3.0
2.5
2.0
1.5
1.0
0.5
1
0
0.0
Figure 2.
Figure 4.
1.5
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
0
V
GS
T
-V
0.2
J
= 0V
2.0
= 150
SD
5
, BODY DIODE FORWARD VOLTAGE (V)
-V
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
GS
Source Voltage
o
-I
Source to Drain Diode
0.4
C
,
D
= -2V
GATE TO SOURCE VOLTAGE (V)
,
2.5
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
DRAIN CURRENT(A)
10
0.6
T
T
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
3.0
J
J
T
15
V
= 125
= 25
J
GS
0.8
= -55
T
V
= -3.5V
J
o
o
GS
C
= 25
C
o
C
3.5
= -2.5V
20
o
1.0
C
µ
I
s
D
= -4.9A
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V
4.0
GS
1.2
25
V
GS
= -4.5V
µ
s
= -3V
1.4
4.5
30