FDS9933BZ Fairchild Semiconductor, FDS9933BZ Datasheet - Page 3
![MOSFET P-CH DUAL 20V 4.9A 8-SOIC](/photos/5/44/54432/fds9933bz_sml.jpg)
FDS9933BZ
Manufacturer Part Number
FDS9933BZ
Description
MOSFET P-CH DUAL 20V 4.9A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS9933BZ.pdf
(6 pages)
Specifications of FDS9933BZ
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 4.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
985pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.046 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.9 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS9933BZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS9933BZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS9933BZ-NL
Manufacturer:
FAIRCHILD
Quantity:
12 647
Part Number:
FDS9933BZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
30
25
20
15
10
Figure 3. Normalized On- Resistance
-75
0.5
5
0
5
0
Figure 1.
0
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
V
D
-50
GS
GS
DS
= -4.9A
vs Junction Temperature
= -4.5V
1.0
= -4.5V
= -5.0V
-25
-V
-V
T
J
On-Region Characteristics
GS
DS
T
,
1
J
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
,
= 150
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
DRAIN TO SOURCE VOLTAGE (V)
1.5
0
o
C
25
µ
2.0
T
s
V
J
2
GS
= -55
50
T
= -3.5V
T
J
J
o
= 25
C
= 25°C unless otherwise noted
2.5
75
o
µ
C
s
100 125 150
3
o
C )
V
3.0
V
V
GS
GS
GS
= -2.5V
= -2V
= -3V
3.5
4
3
1E-3
0.01
100
250
200
150
100
0.1
10
50
3.0
2.5
2.0
1.5
1.0
0.5
1
0
0.0
Figure 2.
Figure 4.
1.5
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
0
V
GS
T
-V
0.2
J
= 0V
2.0
= 150
SD
5
, BODY DIODE FORWARD VOLTAGE (V)
-V
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
GS
Source Voltage
o
-I
Source to Drain Diode
0.4
C
,
D
= -2V
GATE TO SOURCE VOLTAGE (V)
,
2.5
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
DRAIN CURRENT(A)
10
0.6
T
T
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
3.0
J
J
T
15
V
= 125
= 25
J
GS
0.8
= -55
T
V
= -3.5V
J
o
o
GS
C
= 25
C
o
C
3.5
= -2.5V
20
o
1.0
C
µ
I
s
D
= -4.9A
www.fairchildsemi.com
V
4.0
GS
1.2
25
V
GS
= -4.5V
µ
s
= -3V
1.4
4.5
30