SI1912EDH-T1-E3 Vishay, SI1912EDH-T1-E3 Datasheet - Page 2
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SI1912EDH-T1-E3
Manufacturer Part Number
SI1912EDH-T1-E3
Description
MOSFET N-CH DUAL 20V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI1912EDH-T1-E3.pdf
(6 pages)
Specifications of SI1912EDH-T1-E3
Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
280 mOhm @ 1.13A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.13A
Vgs(th) (max) @ Id
450mV @ 100µA
Gate Charge (qg) @ Vgs
1nC @ 4.5V
Power - Max
570mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.28 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.13 A
Power Dissipation
0.74 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.28A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
450mV
Module Configuration
Dual
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1912EDH-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1912EDH-T1-E3
Manufacturer:
VISHY
Quantity:
20 000
Si1912EDH
Vishay Siliconix
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10
b
8
6
4
2
0
0
Gate Current vs. Gate-Source Voltage
V
a
a
4
GS
- Gate-to-Source Voltage (V)
a
J
= 25 °C, unless otherwise noted
a
8
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
12
g
Q
t
SD
t
gd
fs
gs
r
f
g
16
V
I
V
DS
D
DS
≅ 0.5 A, V
= 10 V, V
V
= 16 V, V
V
V
V
V
V
V
V
V
I
V
DS
DS
DS
GS
GS
S
DS
DS
GS
DS
DD
= 0.48 A, V
Test Conditions
= 0 V, V
= 0 V, V
= V
= 4.5 V, I
= 2.5 V, I
= 10 V, I
= 5 V, V
= 1.8 V, I
= 16 V, V
= 10 V, R
GEN
GS
GS
GS
= 4.5 V, I
, I
GS
= 0 V, T
= 4.5 V, R
GS
D
GS
D
D
D
10 000
D
GS
GS
= 100 µA
L
0.001
= 1.13 A
= ± 4.5 V
1000
= ± 12 V
= 1.13 A
= 0.99 A
= 4.5 V
= 0.2 A
0.01
100
= 20 Ω
0.1
10
= 0 V
= 0 V
1
J
D
0
= 85 °C
= 1.13 A
g
= 6 Ω
Gate Current vs. Gate-Source Voltage
T
J
= 150 °C
3
V
GS
Min.
- Gate-to-Source Voltage (V)
0.45
2
T
J
6
= 25 °C
S10-1054-Rev. B, 03-May-10
0.220
0.281
0.344
Typ.
0.65
0.23
350
210
2.6
0.8
0.2
45
85
Document Number: 71408
9
0.280
0.360
0.450
Max.
± 10
130
530
320
± 1
1.2
70
1
5
1
12
Unit
mA
µA
µA
nC
ns
V
A
Ω
S
V
15