SI1912EDH-T1-E3 Vishay, SI1912EDH-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI1912EDH-T1-E3
• Description: MOSFET N-CH DUAL 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1912EDH-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.13A
• Vgs(th) (max) @ Id: 450mV @ 100µA
• Gate Charge (qg) @ Vgs: 1nC @ 4.5V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.28 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.13 A
• Power Dissipation: 0.74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.28A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 450mV
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1912EDH-T1-E3TR

Si1912EDH
Vishay Siliconix
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10
b
8
6
4
2
0
0
Gate Current vs. Gate-Source Voltage
V
a
a
4
GS
- Gate-to-Source Voltage (V)
a
J
= 25 °C, unless otherwise noted
a
8
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
12
g
Q
t
SD
t
gd
fs
gs
r
f
g
16
V
I
V
DS
D
DS
≅ 0.5 A, V
= 10 V, V
V
= 16 V, V
V
V
V
V
V
V
V
V
I
V
DS
DS
DS
GS
GS
S
DS
DS
GS
DS
DD
= 0.48 A, V
Test Conditions
= 0 V, V
= 0 V, V
= V
= 4.5 V, I
= 2.5 V, I
= 10 V, I
= 5 V, V
= 1.8 V, I
= 16 V, V
= 10 V, R
GEN
GS
GS
GS
= 4.5 V, I
, I
GS
= 0 V, T
= 4.5 V, R
GS
D
GS
D
D
D
10 000
D
GS
GS
= 100 µA
L
0.001
= 1.13 A
= ± 4.5 V
1000
= ± 12 V
= 1.13 A
= 0.99 A
= 4.5 V
= 0.2 A
0.01
100
= 20 Ω
0.1
10
= 0 V
= 0 V
1
J
D
0
= 85 °C
= 1.13 A
g
= 6 Ω
Gate Current vs. Gate-Source Voltage
T
J
= 150 °C
3
V
GS
Min.
- Gate-to-Source Voltage (V)
0.45
2
T
J
6
= 25 °C
S10-1054-Rev. B, 03-May-10
0.220
0.281
0.344
Typ.
0.65
0.23
350
210
2.6
0.8
0.2
45
85
Document Number: 71408
9
0.280
0.360
0.450
Max.
± 10
130
530
320
± 1
1.2
70
1
5
1
12
Unit
mA
µA
µA
nC
ns
V
A
Ω
S
V
15