IRF7303QTRPBF International Rectifier, IRF7303QTRPBF Datasheet - Page 2
![MOSFET N-CH DUAL 30V 8-SOIC](/photos/5/44/54437/irf7303qtrpbf_sml.jpg)
IRF7303QTRPBF
Manufacturer Part Number
IRF7303QTRPBF
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7303QTRPBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
4.9A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7303QTRPBFCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7303QTRPBF
Manufacturer:
VISHAY
Quantity:
45 000
Part Number:
IRF7303QTRPBF
Manufacturer:
IR
Quantity:
20 000
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
IRF7303
Notes:
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
R
I
L
L
S
GSS
SM
on
DSS
d(on)
r
d(off)
f
rr
V
fs
(BR)DSS
GS(th)
D
S
oss
iss
rss
SD
DS(ON)
g
gs
gd
rr
(BR)DSS
Repetitive rating; pulse width limited by
I
T
max. junction temperature. ( See fig. 11 )
SD
J
150°C
/ T
2.4A, di/dt
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Internal Source Inductance
73A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
Pulse width
–––
––– 0.032 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
5.2
–––
–––
30
Surface mounted on FR-4 board, t
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
––– 0.050
––– 0.080
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
520
180
–––
4.0
6.0
–––
–––
6.8
7.7
22
72
56
21
47
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
1.0
1.0
2.9
7.9
84
25
25
2.5
71
20
300µs; duty cycle 2%.
V/°C
nH
µA
nA
ns
nC
pF
ns
nC
A
V
V
V
S
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
I
R
R
Between lead tip
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 2.4A
= 2.4A
= 25°C, I
= 25°C, I
= 6.0
= 6.2
= 0V, I
= 24V, V
= 10V, See Fig. 6 and 12
= 10V, I
= 4.5V, I
= V
= 15V, I
= 24V, V
= 20V
= - 20V
= 24V
= 0V
= 25V
= 15V
GS
, I
See Fig. 10
D
F
S
D
D
10sec.
D
= 250µA
D
= 2.4A
GS
= 1.8A, V
GS
Conditions
Conditions
= 250µA
= 2.4A
= 2.4A
= 2.0A
= 0V, T
= 0V
D
= 1mA
GS
J
G
= 125 °C
= 0V
G
S
+L
D
S
D
)
S
D