IRF7303QTRPBF International Rectifier, IRF7303QTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7303QTRPBF
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7303QTRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7303QTRPBFCT

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
IRF7303
Notes:
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
R
I
L
L
S
GSS
SM
on
DSS
d(on)
r
d(off)
f
rr
V
fs
(BR)DSS
GS(th)
D
S
oss
iss
rss
SD
DS(ON)
g
gs
gd
rr
(BR)DSS
Repetitive rating; pulse width limited by
I
T
max. junction temperature. ( See fig. 11 )
SD
J
150°C
/ T
2.4A, di/dt
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Internal Source Inductance
73A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
Pulse width
–––
––– 0.032 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
5.2
–––
–––
30
Surface mounted on FR-4 board, t
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
––– 0.050
––– 0.080
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
520
180
–––
4.0
6.0
–––
–––
6.8
7.7
22
72
56
21
47
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
1.0
1.0
2.9
7.9
84
25
25
2.5
71
20
300µs; duty cycle 2%.
V/°C
nH
µA
nA
ns
nC
pF
ns
nC
A
V
V
V
S
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
I
R
R
Between lead tip
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 2.4A
= 2.4A
= 25°C, I
= 25°C, I
= 6.0
= 6.2
= 0V, I
= 24V, V
= 10V, See Fig. 6 and 12
= 10V, I
= 4.5V, I
= V
= 15V, I
= 24V, V
= 20V
= - 20V
= 24V
= 0V
= 25V
= 15V
GS
, I
See Fig. 10
D
F
S
D
D
10sec.
D
= 250µA
D
= 2.4A
GS
= 1.8A, V
GS
Conditions
Conditions
= 250µA
= 2.4A
= 2.4A
= 2.0A
= 0V, T
= 0V
D
= 1mA
GS
J
G
= 125 °C
= 0V
G
S
+L
D
S
D
)
S
D