IRF7303QTRPBF International Rectifier, IRF7303QTRPBF Datasheet - Page 4
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IRF7303QTRPBF
Manufacturer Part Number
IRF7303QTRPBF
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7303QTRPBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
4.9A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7303QTRPBFCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7303QTRPBF
Manufacturer:
VISHAY
Quantity:
45 000
Part Number:
IRF7303QTRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7303
1 0 0
1000
0 . 1
1 0
800
600
400
200
1
0 . 0
0
1
Fig 7. Typical Source-Drain Diode
Fig 5. Typical Capacitance Vs.
T = 150 °C
V
J
V
S D
0 . 5
D S
C
C
C
Drain-to-Source Voltage
, Source-to-Drain Voltage (V )
rs s
is s
o s s
V
C
C
C
Forward Voltage
, D rain-to-S ource Voltage (V )
G S
is s
rs s
os s
= 0 V,
= C
= C
= C
1 . 0
T = 25 °C
g s
ds
gd
J
+ C
+ C
10
gd
gd
f = 1 MH z
1 . 5
, C
ds
S HO R TED
2 . 0
V
G S
= 0 V
2 . 5
100
A
A
100
20
16
12
10
8
4
0
Fig 8. Maximum Safe Operating Area
1
0
0.1
I
V
D
T
T
Single Pulse
DS
A
J
Fig 6. Typical Gate Charge Vs.
= 2 .4A
= 25 C
= 150 C
= 2 4V
OPERATION IN THIS AREA LIMITED
V
Gate-to-Source Voltage
Q , Total Gate Charge (nC )
DS
5
°
°
G
, Drain-to-Source Voltage (V)
1
10
BY R
DS(on)
FO R TES T C IR CU IT
15
SEE FIG U R E 12
10
20
100us
1ms
10ms
100
25
A