IRF7303QTRPBF International Rectifier, IRF7303QTRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7303QTRPBF
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7303QTRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7303QTRPBFCT

5.0
4.0
3.0
2.0
1.0
0.0
100
0.1
10
0.0001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
Ambient Temperature
50
T , Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
( C)
0.01
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
G
t
d(on)
10V
1. Duty factor D =
2. Peak T = P
Notes:
V
1
GS
V
t
r
DS
J
µs
DM
x Z
t / t
1
D.U.T.
thJA
P
2
IRF7303
10
DM
R
t
+ T
d(off)
D
A
t
1
t
t
f
2
+
-
V
DD
100