IRF7303QTRPBF International Rectifier, IRF7303QTRPBF Datasheet - Page 5
![MOSFET N-CH DUAL 30V 8-SOIC](/photos/5/44/54437/irf7303qtrpbf_sml.jpg)
IRF7303QTRPBF
Manufacturer Part Number
IRF7303QTRPBF
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7303QTRPBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
4.9A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7303QTRPBFCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7303QTRPBF
Manufacturer:
VISHAY
Quantity:
45 000
Part Number:
IRF7303QTRPBF
Manufacturer:
IR
Quantity:
20 000
5.0
4.0
3.0
2.0
1.0
0.0
100
0.1
10
0.0001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
Ambient Temperature
50
T , Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
( C)
0.01
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
G
t
d(on)
10V
1. Duty factor D =
2. Peak T = P
Notes:
V
1
GS
V
t
r
DS
J
µs
DM
x Z
t / t
1
D.U.T.
thJA
P
2
IRF7303
10
DM
R
t
+ T
d(off)
D
A
t
1
t
t
f
2
+
-
V
DD
100