This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown DSS Voltage Breakdown Voltage Temperature ∆BV DSS Coefficient ∆ Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...
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