FDY2000PZ Fairchild Semiconductor, FDY2000PZ Datasheet - Page 4

• Manufacturer Part Number: FDY2000PZ
• Description: MOSFET P-CH DUAL 20V SOT-563F
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY2000PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 100pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
FDY200PZ Rev A
0.01
0.1
10
10
1
8
6
4
2
0
0.01
0.01
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
0
0.0001
1
I
D
SINGLE PULSE
R
= -0.35A
θJA
V
T
GS
D = 0.5
A
= 280
= 25
= -4.5V
R
0.2
DS(ON)
0.1
0.05
0.02
0.5
o
o
0.01
C
C/W
0.1
-V
SINGLE PULSE
LIMIT
DS
, DRAIN-SOURCE VOLTAGE (V)
V
Q
0.001
DS
g
, GATE CHARGE (nC)
= -5V
1
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1
-10V
DC
Figure 11. Transient Thermal Response Curve.
10s
1.5
1s
100ms
0.01
-15V
10ms
10
1ms
2
100µs
2.5
100
0.1
t
1
, TIME (sec)
150
125
100
10
75
50
25
0.0001
8
6
4
2
0
0
0
Figure 8. Capacitance Characteristics.
1
C
Figure 10. Single Pulse Maximum
rss
0.001
4
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
0.01
oss
10
8
t
1
, TIME (sec)
0.1
P(pk)
Duty Cycle, D = t
T
R
12
J
R
θJA
- T
θJA
C
(t) = r(t) * R
100
A
t
iss
1
=280 °C/W
1
= P * R
t
2
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SINGLE PULSE
R
θJA
T
16
A
θJA
= 280° C/W
= 25° C
θJA
1
10
(t)
/ t
f = 1 MHz
V
GS
2
= 0 V
1000
100
20