FDG6306P Fairchild Semiconductor, FDG6306P Datasheet

MOSFET P-CH 20V 0.6A SC70-6

FDG6306P

Manufacturer Part Number
FDG6306P
Description
MOSFET P-CH 20V 0.6A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDG6306P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
420 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
2nC @ 4.5V
Input Capacitance (ciss) @ Vds
114pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG6306P

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG6306P
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDG6306P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDG6306P
0
FDG6306P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P -Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications wi t h a wide range of gate
drive voltage (2.5V – 12V).
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
Battery management
Load switch
D
J
DSS
GSS
, T
JA
Device Marking
STG
.06
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
D
Pin 1
G
S
SC70-6
– Continuous
– Pulsed
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
FDG6306P
S
Device
Parameter
G
D
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1)
(Note 1)
(Note 1)
Features
–0.6 A, –20 V.
Low gate charge
High performance trench technology for extremely
low R
Compact industry standard SC70-6 surface mount
package
DS(ON)
G
S
D
1 or 4
2 or 5
3 or 6
Tape width
–55 to +150
R
R
Ratings
8mm
DS(ON)
DS(ON)
–0.6
–2.0
–20
415
0.3
12
= 420 m @ V
= 630 m @ V
4 or 1
6 or 3
5 or 2
February 2001
G
D
S
FDG6306P Rev C(W)
3000 units
GS
GS
Quantity
= –4.5 V
= –2.5 V
Units
C/W
W
V
V
A
C

Related parts for FDG6306P

FDG6306P Summary of contents

Page 1

... Compact industry standard SC70-6 surface mount package =25 C unless otherwise noted A (Note 1) (Note 1) (Note 1) Reel Size 7’’ February 2001 R = 420 –4.5 V DS(ON 630 –2.5 V DS(ON Ratings Units – –0.6 A –2.0 0.3 W –55 to +150 C 415 C/W Tape width Quantity 8mm 3000 units FDG6306P Rev C(W) ...

Page 2

... JA JA Min Typ Max Units –20 V –14 mV/ C –1 A –100 nA 100 nA –0.6 –1.2 –1 mV/ C 300 420 M 470 630 400 700 –2 A 1.8 S 114 5 1.7 3.4 ns 1.4 2.0 nC 0.3 nC 0.4 nC –0.25 A –0.77 –1.2 V FDG6306P Rev C (W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature -2.5V GS -3.0V -3.5V -4.0V -4.5V 0 DRAIN CURRENT ( -0 125 2.5 3 3 GATE TO SOURCE VOLTAGE ( Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDG6306P Rev C ( 1.4 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 415 C 0.01 0 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 415 °C/W JA P(pk ( Duty Cycle 100 FDG6306P Rev C (W) ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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