FDG6306P Fairchild Semiconductor, FDG6306P Datasheet - Page 2

• Manufacturer Part Number: FDG6306P
• Description: MOSFET P-CH 20V 0.6A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG6306P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 420 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 114pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6306P

Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSSF
GSSR
D(on)
S
d(on)
r
d(off)
f
FS
BV
V
DS(on)
iss
oss
rss
the drain pins. R
GS(th)
g
gs
gd
SD
DSS
GS(th)
T
T
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
(Note 2)
(Note 2)
JA
is determined by the user's board design. R
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
T
A
= 0 V,
= –16 V, V
= –12 V, V
= 12 V, V
= V
= –4.5 V, I
= –2.5 V, I
= –4.5 V, I
= –4.5 V, V
= –5 V, I
= –10 V, V
= –10 V, I
= –4.5 V, R
= –10 V, I
= –4.5 V
= 0 V,
= 25°C unless otherwise noted
Test Conditions
GS
,
I
I
I
D
D
D
D
D
S
D
D
D
GS
DS
DS
GEN
= –250 A
DS
= –250 A
= –0.6 A
GS
= 1 A,
= –0.6 A,
= –0.25 A
= –0.6 A
= –0.5 A
= –0.6 A, T
= 0 V
= 0 V
= 0 V
= –5 V
= 0 V,
= 6
JA
(Note 2)
= 415°C/W when mounted on a minimum pad .
J
=125°C
Min
–0.6
–20
–2
–0.77
Typ
–1.2
–14
300
470
400
114
1.8
5.5
1.7
1.4
0.3
0.4
24
14
3
9
6
Max
–0.25
–100
–1.5
–1.2
100
420
630
700
3.4
2.0
–1
11
25
12
FDG6306P Rev C (W)
Units
mV/ C
mV/ C
M
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A