FDG6306P Fairchild Semiconductor, FDG6306P Datasheet - Page 4

• Manufacturer Part Number: FDG6306P
• Description: MOSFET P-CH 20V 0.6A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG6306P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 420 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 114pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6306P

Typical Characteristics
5
4
3
2
1
0
0.01
Figure 9. Maximum Safe Operating Area.
0.1
10
0
Figure 7. Gate Charge Characteristics.
1
0.1
I
D
= -0.6A
R
SINGLE PULSE
R
0.001
DS(ON)
0.01
V
J A
T
0.1
GS
A
0.0001
= 415
1
0.3
= 25
= -4.5V
LIMIT
o
o
C
C/W
D = 0.5
-V
0.2
DS
0.1
0.6
0.05
SINGLE PULSE
, DRAIN-SOURCE VOLTAGE (V)
Q
0.02
0.01
g
1
, GATE CHARGE (nC)
0.001
0.9
DC
1s
Figure 11. Transient Thermal Response Curve.
100ms
V
DS
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
10ms
= -5V
1.2
10
1ms
100 s
-15V
1.5
0.01
-10V
100
1.8
t
1
, TIME (sec)
0.1
30
24
18
12
0.0001
200
160
120
6
0
80
40
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
0.001
-V
Power Dissipation.
1
5
DS
SINGLE PULSE TIME (SEC)
0.01
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
ISS
OSS
RSS
0.1
P(pk)
Duty Cycle, D = t
T
10
R
R
J
JA
- T
JA
10
(t) = r(t) + R
A
= 415 °C/W
t
1
= P * R
t
1
2
SINGLE PULSE
R
JA
1
15
(t)
JA
JA
/ t
T
FDG6306P Rev C (W)
A
10
= 415
2
= 25
V
f = 1MHz
GS
o
o
C/W
C
100
= 0 V
100
20