FDG8850NZ Fairchild Semiconductor, FDG8850NZ Datasheet - Page 2

• Manufacturer Part Number: FDG8850NZ
• Description: MOSFET DUAL N-CH 30V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG8850NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 750mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 120pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.75 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 750mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG8850NZTR

©2007 Fairchild Semiconductor Corporation
FDG8850NZ Rev.B
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
ΔV
DSS
GSS
d(on)
r
d(off)
f
S
DS(on)
Notes:
1. R
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
FS
GS(th)
SD
iss
oss
rss
ΔT
ΔT
g
gs
gd
Symbol
DSS
GS(th)
R
DSS
J
J
θJA
θJC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
Scale 1:1 on letter size paper.
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Parameter
a. 350°C/W when mounted on a
θJA
1 in
is determined by the user's board design.
(note 2)
2
pad of 2 oz copper .
T
J
= 25°C unless otherwise noted
and Maximum Ratings
I
I
V
V
V
I
V
V
V
V
V
V
V
V
V
D
D
D
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
= 250μA, V
= 250μA, referenced to 25°C
= 250μA, referenced to 25°C
= 10V, V
= 24V, V
= 5V, I
= 5V, I
=4.5V, V
= 0V, I
= ±12V, V
= V
= 4.5V, I
= 2.7V, I
= 4.5V, I
= 4.5V,R
2
DS
Test Conditions
, I
D
S
D
GS
= 0.5A,
= 0.3A
D
DD
GEN
D
D
D
= 0.75A
GS
GS
DS
= 250μA
= 0.75A
= 0.67A
= 0.75A ,T
= 0V, f= 1MHZ
= 5V, I
= 0V
= 0V
= 0V
= 6Ω
D
= 0.75A
(Note 2)
J
b. 415°C/W when mounted on a minimum pad
= 125°C
of 2 oz copper.
0.65
Min
30
0.76
1.03
0.29
0.17
–3.0
0.25
0.29
0.36
Typ
1.0
25
90
20
15
4
1
9
1
3
Max
1.44
±10
120
0.3
1.2
1.5
0.4
0.5
0.6
www.fairchildsemi.com
30
25
10
10
18
10
1
mV/°C
mV/°C
Units
μA
μA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
Ω
A
V
V
S