FDG8850NZ Fairchild Semiconductor, FDG8850NZ Datasheet - Page 4

• Manufacturer Part Number: FDG8850NZ
• Description: MOSFET DUAL N-CH 30V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG8850NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 750mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 120pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.75 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 750mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG8850NZTR

©2007 Fairchild Semiconductor Corporation
FDG8850NZ Rev.B
Typical Characteristics
0.005
0.01
0.1
Figure 7.
0.01
5
4
3
2
1
0
4
1
0.0
0.1
0.1
0.0001
1
ID = 0.22A
SINGLE PULSE
T
R
T
Figure 9.
J
A
θ
DUTY CYCLE-DESCENDING ORDER
D = 0.5
JA
SINGLE PULSE
= MAX RATED
=
0.2
25
V
= 41 5
0.2
0.1
0.05
0.02
0.01
DS
O
C
Gate Charge Characteristics
V
, DRAIN to SOURCE VOLTAGE (V)
DD
O
Operating Area
C/W
0.4
Q
= 5V
g
Forward Bias Safe
, GATE CHARGE(nC)
1
0.001
0.6
V
DD
0.8
Figure 11.
T
J
= 15V
= 25°C unless otherwise noted
10
0.01
V
1.0
DD
= 10V
1.2
t, RECTANGULAR PULSE DURATION (s)
1ms
100ms
Transient Thermal Response Curve
10ms
100
1s
DC
μ
s
1.4
100
0.1
4
Figure 10.
100
0.1
200
50
10
0.0001 0.001
1
10
1
0.1
1
Figure 8.
f = 1MHz
V
GS
= 0V
V
NOTES:
DUTY FACTOR: D = t
PEAK T
R
Single Pulse Maximum Power
DS
to Source Voltage
θ
JA
, DRAIN TO SOURCE VOLTAGE (V)
0.01
Capacitance vs Drain
10
= 415
Dissipation
J
t, PULSE WIDTH (s)
= P
o
C/W
1
DM
0.1
C
C
C
x Z
oss
rss
iss
P
θJA
DM
1
/t
x R
1
2
100
θJA
t
1
+ T
SINGLE PULSE
t
R
T
10
2
A
θ
A
JA
= 25
= 415
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10
O
C
100
O
C/W
1000
1000
30