FDG8850NZ Fairchild Semiconductor, FDG8850NZ Datasheet - Page 3

• Manufacturer Part Number: FDG8850NZ
• Description: MOSFET DUAL N-CH 30V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG8850NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 750mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 120pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.75 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 750mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG8850NZTR

©2007 Fairchild Semiconductor Corporation
FDG8850NZ Rev.B
Typical Characteristics
2.20
1.76
1.32
0.88
0.44
0.00
2.20
1.76
1.32
0.88
0.44
0.00
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On - Resistance
0.0
Figure 1.
-50
0.0
Figure 5. Transfer Characteristics
V
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
D
VDD = 5V
= 4.5V
GS
-25
vs Junction Temperature
= 0.75A
= 4.5V
V
0.5
V
GS
T
0.5
DS
J
On-Region Characteristics
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
0
,
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
DRAIN TO SOURCE VOLTAGE (V)
25
1.0
V
GS
T
J
1.0
μ
= 2.7V
= 150
s
50
T
o
C
1.5
J
75
= 25°C unless otherwise noted
μ
s
T
1.5
J
100
= -55
o
V
V
V
C )
T
GS
J
2.0
GS
GS
= 25
o
= 2.0V
=1.8V
= 1.5V
125
C
o
C
2.0
150
2.5
3
1E-3
0.01
2.6
2.2
1.8
1.4
1.0
0.6
0.8
0.6
0.4
0.2
0.1
0.00
2
1
Figure 2.
Figure 4.
0.2
Forward Voltage vs Source Current
1
vs Drain Current and Gate Voltage
Figure 6.
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
GS
T
J
T
= 0V
= 150
V
J
SD
= 25
0.44
V
0.4
GS
V
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
On-Resistance vs Gate to
GS
o
I
, GATE TO SOURCE VOLTAGE (V)
o
I
D
C
Source Voltage
D
2
C
Source to Drain Diode
= 1.8V
,
=0.38A
DRAIN CURRENT(A)
0.88
0.6
μ
s
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
3
T
T
V
V
J
J
GS
GS
= 125
= -55
1.32
0.8
= 2.7V
= 2.0V
T
J
o
o
C
C
= 25
o
4
C
1.76
V
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1.0
V
GS
GS
= 4.5V
= 3.5V
μ
s
2.20
1.2
5