SI1539DL-T1-E3 Vishay, SI1539DL-T1-E3 Datasheet - Page 2
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SI1539DL-T1-E3
Manufacturer Part Number
SI1539DL-T1-E3
Description
MOSFET N/P-CH 30V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets
1.SI1539DL-T1-E3.pdf
(8 pages)
2.SI1539DL-T1-E3.pdf
(8 pages)
3.SI1539DL-T1-E3.pdf
(12 pages)
Specifications of SI1539DL-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
480 mOhm @ 590mA, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
540mA, 420mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 10V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.48 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.54 A @ N Channel or 0.42 A @ P Channel
Power Dissipation
270 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
630mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
480mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Module Configuration
Dual
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1539DL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1539DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si1539DL
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted)
a
Symbol
R
V
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
DS
I
V
V
D
V
I
DS
D
DS
≅ - 0.5 A, V
DS
= - 15 V, V
I
≅ 0.5 A, V
I
F
F
= 15 V, V
= - 24 V, V
V
V
V
V
V
= - 0.23 A, dI/dt = 100 A/µs
= 24 V, V
V
V
V
V
I
= 0.23 A, dI/dt = 100 A/µs
V
V
GS
DS
V
V
V
GS
I
S
DS
V
DS
DS
S
DD
DS
DS
GS
DS
GS
DD
DS
DS
= - 0.23 A, V
= 0.23 A, V
= - 10 V, I
= - 15 V, I
= - 4.5 V, I
= V
≤ - 5 V, V
= 0 V, V
= V
= - 24 V, V
= - 15 V, R
= 10 V, I
= 15 V, I
= 24 V, V
= 4.5 V, I
= 15 V, R
≥ 5 V, V
N-Channel
P-Channel
N-Channel
P-Channel
GS
GS
GEN
GEN
Test Conditions
GS
GS
GS
GS
, I
= - 10 V, I
, I
= 10 V, I
D
= 0 V, T
GS
= 10 V, R
= - 10 V, R
D
= 0 V, T
GS
GS
D
D
D
D
= - 250 µA
D
D
GS
GS
= 250 µA
L
= 0.59 A
= - 0.42 A
= 0.59 A
= - 0.42 A
GS
GS
= ± 20 V
L
= 0.2 A
= - 0.2 A
= 10 V
= - 10 V
= 30 Ω
= 30 Ω
= 0 V
= 0 V
= 0 V
= 0 V
D
J
D
J
= 85 °C
= 0.59 A
g
= 85 °C
= - 0.42 A
g
= 6 Ω
= 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 1
- 1
1
1
S11-0210-Rev. D, 14-Feb-11
0.410
0.800
0.600
1.500
- 0.86
Document Number: 71250
Typ.
0.75
0.80
0.86
0.90
0.24
0.21
0.08
0.17
0.5
15
20
5
4
8
8
8
5
7
7
± 100
± 100
0.480
0.940
0.700
1.700
Max.
- 1.2
1.2
1.4
1.4
- 3
- 1
- 5
10
10
15
15
15
10
15
15
30
40
3
1
5
Unit
nA
µA
nC
ns
Ω
V
A
S
V