SI1539DL-T1-E3 Vishay, SI1539DL-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI1539DL-T1-E3
• Description: MOSFET N/P-CH 30V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1539DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 480 mOhm @ 590mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 540mA, 420mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 10V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.54 A @ N Channel or 0.42 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 630mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 480mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1539DL-T1-E3TR

Si1539DL
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
6
- 0.2
- 0.4
0.1
0.6
0.4
0.2
10
- 50
8
6
4
2
0
1
0
0.0
0.0
V
I
D
- 25
DS
Source-Drain Diode Forward Voltage
= 0.42 A
0.2
= 15 V
0.2
V
SD
Q
0
g
-
- Total Gate Charge (nC)
0.4
S
T
Threshold Voltage
T
o
J
J
u
25
Gate Charge
- Temperature (°C)
0.4
c r
= 150 °C
e
t -
- o
0.6
50
D
a r
I
n i
D
0.6
= 250 µA
V
75
l o
0.8
a t
g
e
100
T
(
J
) V
0.8
= 25 °C
1.0
125
1.0
1.2
150
1.6
1.4
1.2
1.0
0.8
0.6
3.0
2.5
2.0
1.5
1.0
0.5
0.0
- 50
5
4
3
2
1
0
10
0
- 3
On-Resistance vs. Gate-to-Source Voltage
- 25
V
I
D
On-Resistance vs. Junction Temperature
I
GS
D
= 0.42 A
10
= 0.42 A
= 10 V
- 2
2
V
GS
T
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
Single Pulse Power
25
- 1
4
Time (s)
50
S11-0210-Rev. D, 14-Feb-11
1
Document Number: 71250
6
75
10
100
8
100
125
150
10
600