FDC3601N Fairchild Semiconductor, FDC3601N Datasheet - Page 2

• Manufacturer Part Number: FDC3601N
• Description: MOSFET N-CH DUAL 100V SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC3601N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 153pF @ 50V
• Power - Max: 700W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Threshold Voltage Vgs Typ: 2.6V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
f
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
S
BV
V
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
JA
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a)
mounted on a 0.125
in
copper.
2
Parameter
130 C/W when
pad of 2 oz.
(Note 2)
(Note 2)
CA
is determined by the user's board design.
T
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
A
D
D
b)
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250 A,Referenced to 25 C
= 250 A,Referenced to 25 C
mounted on a .004 in
pad of 2 oz copper
= 10 V, I
= 80 V,
= V
= 5V,
= 50 V,
= 50 V,
= 0 V,
= 20 V,
= –20 V,
= 10 V,
= 6 V,
= 10 V,
= 50 V,
= 10 V,
= 10 V
= 0 V,
140°C/W when
Test Conditions
GS
,
D
I
S
= 1.0 A, T
= 0.8 A
V
V
V
I
I
I
I
V
I
V
I
R
I
GS
DS
DS
D
D
D
D
D
D
D
DS
GEN
GS
= 250 A
= 250 A
= 1.0 A
= 0.9 A
= 1.0 A
= 1 A,
= 1.0 A,
2
= 0 V
= 0 V
= 0 V
= 10 V
= 0 V,
= 6
J
= 125 C
(Note 2)
Min
100
2
3
c)
minimum pad.
Typ Max Units
105
370
396
685
153
2.6
3.6
3.7
0.8
0.8
180°C/W when mounted on a
–5
11
5
1
8
4
6
1
–100
100
500
550
976
0.8
1.2
10
16
20
12
4
8
5
FDC3601N Rev C(W)
mV/ C
mV/ C
m
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A