FDC3601N Fairchild Semiconductor, FDC3601N Datasheet - Page 4

• Manufacturer Part Number: FDC3601N
• Description: MOSFET N-CH DUAL 100V SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC3601N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 153pF @ 50V
• Power - Max: 700W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Threshold Voltage Vgs Typ: 2.6V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
0.001
8
6
4
2
0
0.01
Figure 9. Maximum Safe Operating Area.
0.1
10
0
Figure 7. Gate Charge Characteristics.
1
0.1
0.001
I
D
0.01
R
= 1.0A
0.1
DS(ON)
0.0001
SINGLE PULSE
R
1
JA
V
T
GS
A
= 180
LIMIT
= 25
= 10V
D = 0.5
1
o
o
C
C/W
V
0.2
1
DS
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
Q
g
0.02
, GATE CHARGE (nC)
0.01
0.001
SINGLE PULSE
DC
2
10
1s
Figure 11. Transient Thermal Response Curve.
100ms
10ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1ms
V
DS
= 30V
100
0.01
100 s
3
70V
50V
1000
4
0.1
t
1
, TIME (sec)
200
150
100
50
40
30
20
10
50
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
RSS
1
C
0.01
OSS
10
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
ISS
20
t
10
1
, TIME (sec)
1
P(pk
30
Duty Cycle, D = t
T
R
10
J
R
)
JA
- T
JA
(t) = r(t) + R
100
A
SINGLE PULSE
R
t
= 180°C/W
1
= P * R
t
JA
T
2
A
40
= 180°C/W
100
FDC3601N Rev C(W)
= 25°C
V
f = 1MHz
GS
JA
= 0 V
1
(t)
JA
/ t
2
1000
50
1000