FDC3601N Fairchild Semiconductor, FDC3601N Datasheet - Page 3

• Manufacturer Part Number: FDC3601N
• Description: MOSFET N-CH DUAL 100V SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC3601N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 153pF @ 50V
• Power - Max: 700W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Threshold Voltage Vgs Typ: 2.6V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
4.5
1.5
4
3
2
1
0
6
3
0
0
1.5
Figure 3. On-Resistance Variation with
2.6
2.2
1.8
1.4
0.6
0.2
V
Figure 1. On-Region Characteristics.
1
GS
-50
Figure 5. Transfer Characteristics.
6.0V
V
= 10V
DS
V
I
= 5V
D
GS
= 1.0A
-25
=10V
V
2
2.5
V
GS
4.5V
DS
T
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
0
J
, JUNCTION TEMPERATURE (
Temperature.
5.0V
25
T
A
3.5
= 125
4
50
o
C
-55
o
75
C
4.0V
25
o
C
4.5
100
o
6
C)
125
5.5
150
8
Figure 6. Body Diode Forward Voltage Variation
1.25
0.75
0.25
0.0001
0.5
0.001
1.6
1.4
1.2
0.8
1
0.01
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
1
2
10
1
0
0
Drain Current and Gate Voltage.
V
GS
= 0V
Gate-to-Source Voltage.
V
0.2
GS
V
SD
V
= 4.0V
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
1
, GATE TO SOURCE VOLTAGE (V)
I
0.4
D
T
, DRAIN CURRENT (A)
A
= 125
4.5V
o
C
6
5.0V
2
0.6
T
T
25
6.0V
A
A
o
= 125
= 25
C
0.8
10V
o
C
o
C
-55
3
8
o
C
FDC3601N Rev C(W)
I
D
1
= 0.5A
1.2
4
10