FDG6308P Fairchild Semiconductor, FDG6308P Datasheet
FDG6308P
Manufacturer Part Number
FDG6308P
Description
MOSFET P-CH DUAL 20V SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDG6308P.pdf
(5 pages)
Specifications of FDG6308P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
2.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
153pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
2.1 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.6 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG6308P
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDG6308P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDG6308P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
Battery management
Load switch
J
DSS
GSS
D
, T
JA
Device Marking
STG
P-Channel
.08
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
D
Pin 1
1.8V
G
specified
S
SC70-6
– Continuous
– Pulsed
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
FDG6308P
S
Device
Parameter
G
MOSFET
D
T
A
=25
uses
o
C unless otherwise noted
Reel Size
7’’
(Note 1)
(Note 1)
(Note 1)
Features
–0.6 A, –20 V.
Low gate charge
High performance trench technology for extremely
low R
Compact industry standard SC70-6 surface mount
package
DS(ON)
S
G
D
1 or 4
2 or 5
3 or 6
Tape width
–55 to +150
8mm
R
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–0.6
–1.8
–20
415
0.3
8
= 0.40
= 0.55
= 0.80
PRELIMINARY
4 or 1
6 or 3
5 or 2
October 2000
@ V
@ V
@ V
GS
GS
GS
G
D
S
FDG6308P Rev B(W)
3000 units
Quantity
= –4.5 V
= –2.5 V
= –1.8 V
Units
C/W
W
V
V
A
C
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FDG6308P Summary of contents
Page 1
... Compact industry standard SC70-6 surface mount package =25 C unless otherwise noted A (Note 1) (Note 1) (Note 1) Reel Size 7’’ October 2000 PRELIMINARY –4.5 V DS(ON 0. –2.5 V DS(ON 0. –1.8 V DS(ON Ratings Units –20 8 –0.6 –1.8 0.3 W –55 to +150 415 C/W Tape width Quantity 8mm 3000 units FDG6308P Rev B( ...
Page 2
... JA JA Min Typ Max Units –20 V –15 mV/ C –1 A –100 nA 100 nA –0.4 –0.9 –1 mV/ C 0.27 0.40 0.36 0.55 0.55 0.80 0.35 0.56 –2 A 2.1 S 153 1.6 3.2 ns 1.8 2.5 nC 0.3 nC 0.4 nC –0.25 A –0.77 –1.2 V FDG6308P Rev B (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -1.8V -2.0V -2.5V -3.0V -3.5V -4.5V 0 DRAIN CURRENT ( -0 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDG6308P Rev B ( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 415 C 0.01 0 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 415 °C/W JA P(pk ( Duty Cycle 100 FDG6308P Rev B (W) 20 ...
Page 5
TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...