FDG6308P Fairchild Semiconductor, FDG6308P Datasheet - Page 3

MOSFET P-CH DUAL 20V SC70-6

FDG6308P

Manufacturer Part Number
FDG6308P
Description
MOSFET P-CH DUAL 20V SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDG6308P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
2.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
153pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
2.1 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.6 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG6308P
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDG6308P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
1.5
0.5
1.6
1.2
0.8
0.4
2
1
0
2
0
Figure 3. On-Resistance Variation with
0.5
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
Figure 1. On-Region Characteristics.
0
1
Figure 5. Transfer Characteristics.
-50
V
DS
V
GS
= -5V
V
-3.5V
I
= -4.5V
GS
D
= -0.6A
-25
0.5
= -4.5V
-V
-V
1
GS
T
DS
, GATE TO SOURCE VOLTAGE (V)
-2.5V
0
Temperature.
J
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
1
-3.0V
25
1.5
1.5
50
-2.0V
T
A
= -55
75
2
o
C
-1.8V
100
2
o
C)
125
2.5
o
125
C
25
o
C
150
2.5
3
Figure 6. Body Diode Forward Voltage Variation
1.2
0.8
0.6
0.4
0.2
0.0001
1
0.001
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.01
2.25
1.75
1.25
0.75
1
0.1
2.5
1.5
10
1
2
1
Drain Current and Gate Voltage.
0
0
V
V
GS
1.5
GS
= 0V
= -1.8V
Gate-to-Source Voltage.
T
A
0.2
= 25
-V
-V
2
SD
GS
-2.0V
, BODY DIODE FORWARD VOLTAGE (V)
o
, GATE TO SOURCE VOLTAGE (V)
0.5
C
T
A
-I
2.5
= 125
0.4
D
-2.5V
, DRAIN CURRENT (A)
T
o
C
A
= 125
3
25
0.6
-3.0V
1
o
C
o
C
-55
3.5
o
-3.5V
C
0.8
1.5
4
FDG6308P Rev B (W)
I
-4.5V
D
1
= -0.3 A
4.5
1.2
2
5

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