FDG6335N Fairchild Semiconductor, FDG6335N Datasheet
FDG6335N
Manufacturer Part Number
FDG6335N
Description
MOSFET N-CH 20V 700MA SOT-363
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDG6335N.pdf
(5 pages)
Specifications of FDG6335N
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 700mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
700mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
113pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
2.8 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.7 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1609797
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FDG6335N
20V N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low R
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
DC/DC converter
Power management
Loadswitch
J
DSS
GSS
D
, T
JA
Device Marking
DS(ON)
STG
N-Channel
and gate charge (Q
.35
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
D
Pin 1
MOSFET
G
S
SC70-6
G
) in a small package.
– Continuous
– Pulsed
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
has
FDG6335N
S
Device
Parameter
G
been
D
designed
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1)
(Note 1)
(Note 1)
Features
0.7 A, 20 V.
Low gate charge (1.1 nC typical)
High performance trench technology for extremely
low R
Compact industry standard SC70-6 surface mount
package
DS(ON)
S
D
G
1 or 4
2 or 5
3 or 6
Tape width
–55 to +150
Ratings
8mm
R
R
Dual N-Channel
DS(ON)
DS(ON)
415
0.7
2.1
0.3
20
12
= 300 m @ V
= 400 m @ V
6 or 3
5 or 2
4 or 1
October 2001
FDG6335N Rev C (W)
D
G
S
GS
GS
3000 units
Quantity
= 4.5 V
= 2.5 V
Units
C/W
W
V
V
A
C
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Datasheet:
FDG6335N Summary of contents
Page 1
... Compact industry standard SC70-6 surface mount package =25 C unless otherwise noted A (Note 1) (Note 1) (Note 1) Reel Size 7’’ October 2001 R = 300 4.5 V DS(ON 400 2.5 V DS(ON Dual N-Channel Ratings Units 20 12 0.7 2.1 0.3 W –55 to +150 415 C/W Tape width Quantity 8mm 3000 units FDG6335N Rev C ( ...
Page 2
... R = 415°C/W when mounted on a minimum pad . JA JA Min Typ Max Units mV 100 nA –100 nA 0.6 1.1 1.5 V –2.8 mV/ C 180 300 m 293 400 247 442 1 A 2.8 S 113 1 1.1 1.4 nC 0.24 nC 0.3 nC 0.25 A 0.74 1.2 V FDG6335N Rev C (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( =0. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDG6335N Rev C ( 1.2 ...
Page 4
... Figure 8. Capacitance Characteristics. 10 100 s 8 1ms 0.001 10 100 Figure 10. Single Pulse Maximum 0.01 0 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 415°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 415 °C/W JA P(pk ( Duty Cycle FDG6335N Rev C (W) 20 100 100 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...