FDG6335N Fairchild Semiconductor, FDG6335N Datasheet - Page 4

• Manufacturer Part Number: FDG6335N
• Description: MOSFET N-CH 20V 700MA SOT-363
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG6335N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 113pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 2.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.7 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1609797

Typical Characteristics
0.01
0.1
10
1
0.001
5
4
3
2
1
0
0.1
0.01
0
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
0.0001
1
SINGLE PULSE
R
I
R
D
DS(ON)
= 0.7A
V
JA
T
GS
A
= 415
= 25
= 4.5V
LIMIT
o
o
D = 0.5
C/W
C
0.4
V
0.2
DS
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
SINGLE PULSE
0.02
Q
1
0.01
g
, GATE CHARGE (nC)
0.001
DC
V
0.8
1s
DS
100ms
= 5V
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
10ms
10
15V
1ms
100 s
1.2
0.01
10V
1.6
100
0.1
200
150
100
10
50
8
6
4
2
0
0.001
0
0
Figure 8. Capacitance Characteristics.
C
RSS
Figure 10. Single Pulse Maximum
0.01
C
OSS
V
Power Dissipation.
DS
5
1
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
0.1
t
1
, TIME (sec)
10
P(pk)
Duty Cycle, D = t
T
1
R
R
J
10
- T
JA
JA
(t) = r(t) * R
A
= 415 °C/W
t
1
= P * R
t
SINGLE PULSE
R
2
15
JA
T
10
FDG6335N Rev C (W)
A
= 415°C/W
= 25°C
V
f = 1MHz
JA
GS
1
JA
(t)
/ t
= 0 V
2
100
100
20