FDG6335N Fairchild Semiconductor, FDG6335N Datasheet - Page 3

• Manufacturer Part Number: FDG6335N
• Description: MOSFET N-CH 20V 700MA SOT-363
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG6335N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 113pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 2.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.7 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1609797

Typical Characteristics
1.6
1.4
1.2
0.8
0.6
2.5
1.5
0.5
4
3
2
1
0
1
2
1
0
0
-50
Figure 3. On-Resistance Variation with
0.5
V
Figure 1. On-Region Characteristics.
GS
Figure 5. Transfer Characteristics.
V
3.5V
V
=4.5V
DS
I
GS
D
= 5V
=0.7A
-25
= 4.5V
1
V
1
T
V
GS
0
3.0V
J
DS
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
25
1.5
50
2
T
A
= -55
2.5V
2
75
o
C
125
o
100
C)
3
o
C
25
2.5
o
C
2.0V
125
150
4
3
Figure 6. Body Diode Forward Voltage Variation with
0.0001
0.001
0.01
0.8
0.6
0.4
0.2
0.1
1.8
1.6
1.4
1.2
0.8
10
0
1
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1
0
0
V
Source Current and Temperature.
GS
V
Drain Current and Gate Voltage.
GS
T
= 0V
A
= 2.5V
= 25
0.2
Gate-to-Source Voltage.
V
o
SD
C
, BODY DIODE FORWARD VOLTAGE (V)
V
2
1
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
0.4
T
I
= 125
D
A
, DRAIN CURRENT (A)
= 125
3.0V
o
C
o
C
0.6
3
2
3.5V
25
o
C
0.8
4.0V
-55
3
4
o
FDG6335N Rev C (W)
C
I
D
1
=0.4A
4.5V
1.2
4
5