SI3552DV-T1-E3 Vishay, SI3552DV-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI3552DV-T1-E3
• Description: MOSFET N/P-CH 30V 2.5/1.8A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3552DV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 1.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 5V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.105 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A @ N Channel or 1.8 A @ P Channel
• Power Dissipation: 1150 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 51A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 360mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3552DV-T1-E3TR

Si3552DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.0
0.1
0.4
0.2
10
0.01
1
0.1
- 50
0
2
1
10
-4
Duty Cycle = 0.5
0.05
- 25
Source-Drain Diode Forward Voltage
0.2
0.1
0.02
0.2
V
SD
0
Single Pulse
T
J
- Source-to-Drain Voltage (V)
T
Threshold Voltage
= 150 °C
0.4
J
I
10
D
- Temperature (°C)
25
= 250 µA
-3
0.6
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
T
10
J
100
= 25 °C
-2
1.0
125
1.2
150
Square Wave Pulse Duration (s)
10
-1
0.40
0.32
0.24
0.16
0.08
0.00
1
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
I
D
= 2 A
2
V
GS
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
0.1
P
- Gate-to-Source Voltage (V)
DM
JM
- T
Time (s)
4
A
t
1
= P
I
D
t
S09-2110-Rev. C, 12-Oct-09
2
DM
= 2.5 A
Document Number: 70971
Z
thJA
thJA
1
100
6
t
t
(t)
1
2
= 130 °C/W
8
600
10
10
30