SI3552DV-T1-E3 Vishay, SI3552DV-T1-E3 Datasheet - Page 4
![MOSFET N/P-CH 30V 2.5/1.8A 6TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3552DV-T1-E3
Manufacturer Part Number
SI3552DV-T1-E3
Description
MOSFET N/P-CH 30V 2.5/1.8A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets
1.SI3552DV-T1-E3.pdf
(8 pages)
2.SI3552DV-T1-E3.pdf
(5 pages)
3.SI3552DV-T1-E3.pdf
(8 pages)
Specifications of SI3552DV-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A, 1.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 5V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.105 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A @ N Channel or 1.8 A @ P Channel
Power Dissipation
1150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
51A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
360mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3552DV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3552DV-T1-E3
Manufacturer:
VIS
Quantity:
20 000
Si3552DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.0
0.1
0.4
0.2
10
0.01
1
0.1
- 50
0
2
1
10
-4
Duty Cycle = 0.5
0.05
- 25
Source-Drain Diode Forward Voltage
0.2
0.1
0.02
0.2
V
SD
0
Single Pulse
T
J
- Source-to-Drain Voltage (V)
T
Threshold Voltage
= 150 °C
0.4
J
I
10
D
- Temperature (°C)
25
= 250 µA
-3
0.6
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
T
10
J
100
= 25 °C
-2
1.0
125
1.2
150
Square Wave Pulse Duration (s)
10
-1
0.40
0.32
0.24
0.16
0.08
0.00
1
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
I
D
= 2 A
2
V
GS
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
0.1
P
- Gate-to-Source Voltage (V)
DM
JM
- T
Time (s)
4
A
t
1
= P
I
D
t
S09-2110-Rev. C, 12-Oct-09
2
DM
= 2.5 A
Document Number: 70971
Z
thJA
thJA
1
100
6
t
t
(t)
1
2
= 130 °C/W
8
600
10
10
30